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Vishay N-Channel MOSFET, 410 A Maximum Continuous Drain Current, 30 V Drain Source Voltage, Depletion Mode SQJ186EP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SQJ186EP-T1_GE3 |
| Width | 4.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8L |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 410A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.02Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Designed for high power density applications.
- Features a 4-pin PowerPAK SO-8L package suitable for surface mounting.
- Maximum power dissipation is 255 W, enabling robust performance.
- Operating temperature range from -55°C to 125°C ensures reliability in harsh environments.
- Low maximum drain-source resistance of 0.02 ohms for efficient switching.
- Typical gate charge of 43 nC at specified gate-source voltage.
- Maximum gate-source voltage rating of 20 V supports diverse circuit requirements.
- Equipped with forward voltage of 1.1 V for optimized conduction.
Product Description
Vishay SQJ186EP-T1_GE3 is a high-performance N-Channel MOSFET designed for use in demanding industrial and automotive semiconductor applications. Operating in depletion mode, it enables high power density management, supporting a maximum continuous drain current of 410 A and a drain-source voltage of 30 V, making it suitable for power electronics where efficiency and thermal reliability are critical.
This MOSFET is packaged in a 4-pin PowerPAK SO-8L surface-mount package, which offers low thermal resistance and compact footprint, ideal for modern PCB designs. Its maximum power dissipation capability of 255 W facilitates high power operation while maintaining device stability at elevated temperatures, with an operating range from -55°C to 125°C.
The device features a low maximum drain-source resistance of 0.02 Ω, providing efficient switching with minimal power losses. The typical gate charge of 43 nC allows for fast switching speeds, improving overall circuit performance. It supports a maximum gate-source voltage of 20 V and has a forward voltage drop of 1.1 V, providing reliable conduction characteristics.
Certified to automotive standard AEC-Q101, the SQJ186EP-T1_GE3 is validated for use in automotive systems and other rigorous industrial environments, ensuring durability and compliance. Its compact length of 6.15 mm and width of 4.9 mm enable integration into tight PCB layouts without compromising performance.
This MOSFET is well suited for applications in power management, motor drives, automotive electronics, and high power density circuit designs. Due to its robust electrical characteristics and automotive qualification, it provides dependable performance in a variety of commercial and industrial use cases.
Designed for efficient power handling in automotive and industrial applications. Depletion mode operation enables specific circuit configurations. Compatible with surface mount manufacturing processes for integration flexibility.
Extensive operating temperature range ensures performance under extreme conditions. Compact package aids in space-constrained electronics design. Explore more products in the MOSFET category at EnvMart for a comprehensive selection of semiconductor components tailored to diverse industrial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 410 A.
The maximum drain-source voltage for the SQJ186EP-T1_GE3 is 30 V.
This model is packaged in a PowerPAK SO-8L surface-mount package.
The operating temperature range for this MOSFET is from -55°C to 125°C.
The maximum power dissipation capability is 255 W.
The typical gate charge at the specified gate-source voltage is 43 nC.
The maximum gate-source voltage rating is 20 V.
The maximum drain-source resistance is 0.02 Ω.
This model is certified to the automotive standard AEC-Q101.
The dimensions are 6.15 mm in length and 4.9 mm in width.
It is suitable for applications in power management, motor drives, and automotive electronics.
The channel mode of this MOSFET is depletion.
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