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onsemi N-Channel MOSFET 101A 150V Enhancement Mode Surface Mount TO-263 4-Pin NTB7D3N15MC
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 15.88mm |
| Length | 10.67mm |
| Model | NTB7D3N15MC |
| Width | 4.83mm |
| Mount Type | Surface |
| Series | NTB7D |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 101A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 73mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 166W |
| Typical Gate Charge Qg @ Vgs | 53nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features an enhancement mode channel for efficient switching performance.
- Maximum continuous drain current of 101 amperes supports high power applications.
- Low maximum drain-source resistance of 73 milliohms ensures minimal conduction losses.
- Maximum power dissipation of 166 watts suits robust industrial demands.
- Operates over a temperature range from -55°C to 175°C for reliability.
- Surface mount design with 4-pin TO-263 package for compact PCB integration.
- Typical gate charge of 53 nanocoulombs enabling fast switching.
- Maximum gate-source voltage of 20 volts for enhanced device protection.
Product Description
onsemi NTB7D3N15MC is a high-performance N-channel MOSFET designed for power electronics and industrial applications. This device supports a maximum continuous drain current of 101 amperes and a maximum drain-source voltage of 150 volts, making it suitable for demanding switching applications.
Packaged in a compact surface mount TO-263 4-pin configuration, the MOSFET offers enhanced installation flexibility and reliable performance on PCB assemblies.
This enhancement mode MOSFET features an industry-leading low on-resistance of 73 milliohms at VGS = 10 V and ID = 62 A, ensuring high efficiency and reduced conduction losses. The device is engineered for optimized switching performance with one of the lowest Qrr values available, leading to reduced switching spike and EMI, critical in noise-sensitive industrial environments.
With a maximum power dissipation rating of 166 watts and operating temperature capabilities from -55°C minimum up to 175°C maximum, it is well suited for thermal demanding applications including power supplies, motor drives, automotive electronics, and industrial controls.
The device includes a soft body diode that significantly lowers switching noise and electromagnetic interference, which is advantageous in sophisticated electronic equipment needing quiet operation.
High continuous current handling capacity of 101 A. Robust maximum voltage tolerance of 150 V across drain-source terminals. Low on-resistance maximizes energy efficiency. Compact, surface mount TO-263 4-pin package design.
Wide operating temperature range from -55°C to 175°C. Low typical gate charge for fast switching speeds. Maximum gate-source voltage rating of 20 V enhances reliability. Engineered for reduced switching noise and EMI. Suitable for industrial, automotive, power supply, and motor control applications.
100% unusable input leakage tested for quality assurance.
This MOSFET is ideal for designers and engineers needing a reliable, efficient semiconductor for power management and switching tasks. Explore the full range of MOSFETs and semiconductors in the Electronics & Electricals category on EnvMart for comprehensive solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 101 amperes, making it suitable for high power applications.
This MOSFET has a maximum drain-source voltage rating of 150 volts, allowing it to handle demanding switching applications.
The maximum drain-source resistance is 73 milliohms, which helps to minimize conduction losses during operation.
It operates over a temperature range from -55°C to 175°C, ensuring reliability in various thermal conditions.
This model is packaged in a compact surface mount TO-263 4-pin configuration, suitable for PCB integration.
The typical gate charge is 53 nanocoulombs, which enables fast switching performance.
The maximum power dissipation rating for this device is 166 watts, suitable for robust industrial applications.
It is suitable for applications including power supplies, motor drives, automotive electronics, and industrial controls.
The maximum gate-source voltage for this MOSFET is 20 volts, which enhances device protection.
The dimensions of this model are 15.88 mm in height, 10.67 mm in length, and 4.83 mm in width.
This device features an N-channel enhancement mode, designed for efficient switching performance.
The country of origin for this model is India, indicating its manufacturing location.
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