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Nexperia N-Channel Enhancement MOSFET, 7.9 A, 30 V, 12.5 W, 8-Pin MLPAK33 PXN017-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXN017-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Utilizes trench MOSFET technology for enhanced efficiency.
- Features ultra-low gate charge (QG) for high system efficiency at fast switching frequencies.
- Offers superfast switching with soft recovery to minimize losses.
- MLPAK33 surface-mount package has a compact 3.3 x 3.3 mm footprint.
- Designed for operation in a wide temperature range from -55°C to 150°C.
- Maximum power dissipation rating of 12.5 W.
- Low drain-source resistance (Rds) of 13.6 mΩ ensures reduced conduction losses.
- Compatible with logic-level inputs for ease of control.
Product Description
The Nexperia PXN017-30QLJ is a high-performance N-Channel enhancement mode MOSFET designed for efficient power switching and management. Incorporating trench MOSFET technology, it provides ultra-low gate charges (QG and QGD), enabling exceptional system efficiency especially at higher switching frequencies.
Housed in a compact MLPAK33 surface-mount package with an 8-pin configuration and a 3.3 x 3.3 mm footprint, this MOSFET is suitable for high-density electronic assemblies. It supports a maximum continuous drain current of 7.9 A and a maximum drain-source voltage of 30 V, making it ideal for low-voltage power applications.
With a maximum power dissipation of 12.5 W and an operating temperature range from -55°C to 150°C, the PXN017-30QLJ ensures reliability under harsh industrial and environmental conditions. Its low drain-source resistance of 13.6 mΩ reduces conduction losses, improving overall efficiency in circuits.
The device features superfast switching with soft recovery characteristics, reducing switching losses and electromagnetic interference (EMI). It is logic-level compatible, facilitating straightforward integration with control circuits. The maximum gate-source voltage of 20 V guarantees robust operation and switching stability.
Utilizes trench MOSFET technology for enhanced efficiency. Ultra-low gate charge and soft recovery for high switching performance. Compact MLPAK33 8-pin surface-mount package suitable for dense layouts. Wide operating temperature range from -55°C to 150°C.
Maximum continuous drain current 7.9 A at 30 V drain-source voltage. Low Rds(on) of 13.6 mΩ minimizes power loss. Maximum power dissipation of 12.5 W for reliable performance. Logic-level compatible for easy control integration.
Designed for industrial, power management, and electronic semiconductor applications. Suitable applications include industrial power electronics, automotive electronics, and a variety of consumer devices where efficient and reliable switching is essential.
Explore more high-quality MOSFETs and semiconductor components at EnvMart to meet your power management and electronic design requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7.9 A.
This MOSFET has a maximum drain-source voltage of 30 V.
The maximum power dissipation rating is 12.5 W.
It comes in an MLPAK33 surface-mount package with a compact footprint of 3.3 x 3.3 mm.
The operating temperature range is from -55°C to 150°C.
The low drain-source resistance is 13.6 mΩ, which helps minimize conduction losses.
Yes, it is compatible with logic-level inputs for ease of control integration.
It utilizes trench MOSFET technology for enhanced efficiency and performance.
The maximum gate-source voltage for this MOSFET is 20 V.
It is suitable for industrial power electronics, automotive electronics, and various consumer devices requiring efficient switching.
It features ultra-low gate charge and superfast switching with soft recovery characteristics to reduce losses.
The MLPAK33 package has 8 pins.
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