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Infineon IPA N-Channel MOSFET, 192 A, 40 V, 3-Pin TO-263 Surface Mount, 81 W Power Dissipation IRF100S201
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IRF100S201 |
| Mount Type | Surface |
| Series | IPA |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 192A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.9mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The device supports a maximum power dissipation of 81 W for robust performance.
- Equipped with surface mount type package optimizing board integration.
- Features a low maximum drain-source resistance of 2.9 milliohms for efficiency.
- Operates reliably within temperature range from -55°C to 175°C.
- Designed to meet RoHS compliance and automotive standard AEC-Q101.
- Includes 3 pins in a TO-263 package for easy connectivity.
- Typical gate charge is 80 nanocoulombs at Vgs.
- Maximum gate-source voltage is rated at 20 V ensuring safe operation.
Product Description
Infineon IRF100S201 is a high-current N-Channel MOSFET optimized for low frequency applications requiring ruggedness and performance. It features a maximum continuous drain current of 192 A and a drain-source voltage of 40 V, housed in an industry-standard TO-263 surface mount package with 3 pins.
Engineered for applications such as power management in industrial electronics and automotive sectors, this MOSFET supports a maximum power dissipation of 81 W. The device operates efficiently with a low drain-source resistance (Rds) of 2.9 milliohms and a typical gate charge of 80 nC, enabling fast switching and reduced power losses.
Operating temperature ranges from -55°C to 175°C, meeting the stringent requirements of automotive standard AEC-Q101 and ensuring reliability in harsh environments. The MOSFET complies with RoHS standards, making it suitable for environmentally conscious designs.
The device supports a maximum power dissipation of 81 W for robust performance. Low maximum drain-source resistance of 2.9 milliohms for efficiency. Operating temperature range from -55°C to 175°C for reliability. RoHS compliant and certified to automotive standard AEC-Q101.
Features a typical gate charge of 80 nanocoulombs at specified gate voltage. Maximum gate-source voltage is 20 V ensuring operational safety. Forward voltage drop of 1.2 V to improve conduction efficiency. Surface mount TO-263 package with 3 pins for easy PCB integration.
This MOSFET is ideal for applications in industrial power electronics, automotive control systems, and general-purpose switching tasks. Its rugged design and electrical characteristics provide dependable operation in demanding environments.
Explore additional Infineon products and components in the MOSFET category at EnvMart to complement your power electronics needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 192 A.
The maximum drain-source voltage is rated at 40 V.
It supports a maximum power dissipation of 81 W.
This MOSFET operates reliably within a temperature range from -55°C to 175°C.
The typical gate charge is 80 nanocoulombs at the specified gate voltage.
The maximum gate-source voltage is rated at 20 V, ensuring safe operation.
It features a low maximum drain-source resistance of 2.9 milliohms.
This model is housed in a TO-263 surface mount package with 3 pins for easy connectivity.
Yes, it meets RoHS compliance and the automotive standard AEC-Q101.
It is engineered for applications in industrial power electronics and automotive control systems.
The forward voltage drop is 1.2 V, which improves conduction efficiency.
The country of origin for this model is India.
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