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Vishay E N-Channel Power MOSFET 21 A 650 V Depletion Mode 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHK125N60E-T1-GE3 |
| Mount Type | Surface |
| Series | E |
| Maximum Operating Temperature | +150°C |
| Package Type | PowerPAK 10 x 12 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 0.109Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 132W |
| Typical Gate Charge Qg @ Vgs | 54nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- The MOSFET features a low Rds(on) of 0.109Ω to minimize conduction losses.
- It supports a maximum power dissipation of 132 W for enhanced thermal performance.
- Operating temperature ranges from -55°C to +150°C for harsh environment suitability.
- Typical gate charge of 54nC ensures rapid switching transitions.
- Maximum gate source voltage tolerance is 30 V for robust gate drive capability.
- Forward voltage drop is 1.2 V supporting efficient conduction efficiency.
- Designed with Depletion mode channel type for high-voltage applications.
- Compliant with RoHS standards and certified to AEC-Q101 automotive standard.
Product Description
Vishay SIHK125N60E-T1-GE3 Power MOSFET is an E series N-channel high-voltage semiconductor device engineered for demanding power-conversion systems requiring a 21 A continuous current and withstand voltage of up to 650 V. This device operates reliably in extreme temperature ranges from -55°C to +150°C, making it ideal for harsh automotive and industrial environments. Packaged in a compact and low-profile 8-Pin PowerPAK 10 x 12 surface-mount format, it facilitates dense PCB layouts and supports automated assembly processes.
The device exhibits a low on-resistance (Rds(on)) of 0.109Ω, minimizing conduction losses and improving overall energy efficiency in power stages. It delivers a maximum power dissipation of 132 W, providing thermal headroom to maintain performance under heavy loads. With a typical gate charge of 54nC at Vgs and a maximum gate source voltage of 30 V, it enables fast switching transitions and robust gate drive conditions critical for high-frequency applications.
The MOSFET’s depletion mode channel configuration supports high-voltage switching necessary in half-bridge and synchronous-rectifier circuits, commonly found in on-board automotive power modules, industrial DC-DC converters, telecommunications equipment, and motor drive circuits.
The low Rds(on) reduces energy losses during conduction. High maximum power dissipation allows thermal stability under load. Wide operating temperature range supports harsh industrial and automotive conditions. Compact PowerPAK 10 x 12 package enhances PCB space efficiency.
Compliant with RoHS and automotive AEC-Q101 standards ensuring environmental and quality performance. Suitable for high-voltage DC-DC converters and power supply modules. Optimized gate charge supports fast switching for power electronics efficiency.
This Power MOSFET provides a reliable solution for power distribution and control in demanding industrial, automotive, telecommunications, and manufacturing applications. Its combination of electrical performance, compact packaging, and automotive-grade qualification makes it a versatile component for modern electronic design challenges.
Discover more power semiconductor solutions and advanced automotive-grade devices at EnvMart for your industrial and commercial electronics projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 21 A.
It can withstand a maximum drain-source voltage of 650 V.
This MOSFET operates reliably in a temperature range from -55°C to +150°C.
The device is packaged in a PowerPAK 10 x 12 format.
The typical gate charge at Vgs is 54 nC.
It has a maximum power dissipation of 132 W.
The on-resistance (Rds(on)) is 0.109Ω, which helps minimize conduction losses.
It is certified to the AEC-Q101 automotive standard.
The maximum gate-source voltage tolerance is 30 V.
This model features a depletion mode channel type.
Yes, it is compliant with RoHS standards.
It is suitable for high-voltage switching in applications such as automotive power modules and industrial DC-DC converters.
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