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Vishay EF N-Channel Depletion Power MOSFET, 46 A, 650 V, 3-Pin TO-263 SIHB055N60EF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHB055N60EF-GE3 |
| Mount Type | Surface |
| Series | EF |
| Maximum Operating Temperature | 125°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 46A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 0.05Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 278W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for maximum continuous drain current of 46 A.
- Supports maximum drain-source voltage of 650 V.
- Features a 3-pin TO-263 surface-mount package.
- Low drain-source resistance Rds(on) of 0.05 ohms minimizes conduction losses.
- Forward voltage of 1.2 V with typical gate charge of 63 nC at Vgs.
- Maximum power dissipation rating of 278 W for robust thermal performance.
- Operates effectively between -55°C and 125°C ambient temperatures.
- Maximum gate-source voltage tolerance of ±30 V ensures gate protection.
Product Description
Vishay's SIHB055N60EF-GE3 is a high-performance EF series N-Channel depletion-mode power MOSFET featuring a 3-pin TO-263 surface-mount package. It supports a maximum continuous drain current of 46 A and a maximum drain-source voltage of 650 V, making it suitable for demanding electronic power applications. Designed with advanced 4th generation E series technology, this device ensures low effective capacitance for superior switching performance and low conduction losses.
The MOSFET exhibits a low drain-source resistance of 0.05 ohms, contributing to improved efficiency. The forward voltage drop is rated at 1.2 V, with a typical gate charge of 63 nC at gate-source voltage, ensuring responsive gate control. Power dissipation capability of 278 W allows operation under high load conditions with reliable thermal management.
Operating temperature range from -55°C to 125°C enables usage in diverse industrial environments including server power supplies, telecom applications, welding equipment, and motor drive controls. The device tolerates gate-source voltages up to ±30 V and meets automotive standard AEC-Q101, underscoring its reliability for automotive electronics applications.
Maximum continuous drain current: 46 A. Maximum drain-source voltage: 650 V. Package: 3-pin TO-263 surface mount. Drain-source resistance Rds: 0.05 ohms. Forward voltage: 1.2 V. Typical gate charge: 63 nC at Vgs. Power dissipation: 278 W.
Operating temperature: -55°C to 125°C. Maximum gate-source voltage: ±30 V. Complies with AEC-Q101 automotive standard.
This Power MOSFET is ideal for industrial, telecommunications, server power, welding, and motor drive applications where high efficiency and reliability are essential. Vishay’s advanced technology in this EF series offers improved switching and conduction performance in compact packaging.
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Frequently Asked Questions
The maximum continuous drain current for this model is 46 A.
It supports a maximum drain-source voltage of 650 V.
This power MOSFET comes in a 3-pin TO-263 surface-mount package.
The typical gate charge at gate-source voltage is 63 nC.
The maximum power dissipation rating for this model is 278 W.
It operates effectively between -55°C and 125°C.
The drain-source resistance Rds(on) is 0.05 ohms.
This model complies with the AEC-Q101 automotive standard.
The maximum gate-source voltage tolerance is ±30 V.
The forward voltage drop is rated at 1.2 V.
This device features an N-channel type.
It is suitable for industrial, telecommunications, server power, welding, and motor drive applications.
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