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Vishay PowerPAK (8x8L) 4-Pin N-Channel MOSFET 445 A 30 V Depletion Mode SQJQ112E-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SQJQ112E-T1_GE3 |
| Width | 4.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK (8x8L) |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 445A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.00253Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET supports high power density applications.
- Package type is PowerPAK (8x8L) with a surface mount.
- Maximum drain-source resistance is 0.00253 Ω ensuring low conduction losses.
- Capable of dissipating up to 255 W power.
- Operational temperature range from -55°C to 125°C.
- Pin count is 4 for stable and efficient mounting.
- Forward voltage drop is 1.1 V optimizing device efficiency.
- Equipped with AEC-Q101 automotive standard qualification.
Product Description
Vishay SQJQ112E-T1_GE3 is a high-performance PowerPAK (8x8L) 4-pin N-Channel MOSFET designed for demanding automotive and industrial applications. It supports a maximum continuous drain current of 445 A and a drain-source voltage rating of 30 V, operating in depletion mode. This device is engineered for high power density environments and features a low on-resistance of 0.00253 Ω, minimizing energy loss during operation.
This MOSFET package type is PowerPAK (8x8L), providing a compact surface mount design with 4 pins to ensure efficient thermal management and mechanical stability. The device is capable of dissipating up to 255 W of power, making it suitable for high power dissipation requirements in various industrial sectors.
Thermal and electrical performance allow operation over an extensive temperature range from -55°C to 125°C, aligning with automotive-grade standards. Forward voltage drop of 1.1 V contributes to effectiveness in power switching applications. The device is also qualified to meet the AEC-Q101 automotive standard, confirming its reliability and robustness in automotive electronic circuits.
The typical gate charge of 43 nC at Vgs facilitates fast switching, enhancing efficiency in power management circuits. The overall length and width dimensions measure 6.15 mm and 4.9 mm respectively, supporting compact PCB layouts.
High continuous drain current capacity of 445 A for demanding power applications. Low on-resistance reduces conduction losses and improves efficiency. Compact PowerPAK (8x8L) surface mount package for space-saving PCB design.
Wide operating temperature range from -55°C to 125°C ensures application versatility. Automotive grade AEC-Q101 qualified for use in critical automotive systems. Effective thermal dissipation rated at 255 W power handling.
Forward voltage drop of 1.1 V improves energy efficiency. 4-pin configuration for reliable electrical and mechanical connections. Typical gate charge of 43 nC supports fast switching performance.
Ideal for industrial, automotive, and high power-density electronics requiring reliable and efficient MOSFET performance. Explore more power semiconductor solutions in the Electronics & Electricals category on EnvMart.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SQJQ112E-T1_GE3 is 445 A.
This model has a maximum drain-source voltage rating of 30 V.
The maximum drain-source resistance is 0.00253 Ω, ensuring low conduction losses.
It is capable of dissipating up to 255 W of power, suitable for high power dissipation applications.
The operational temperature range is from -55°C to 125°C.
The forward voltage drop is 1.1 V, which optimizes device efficiency.
The typical gate charge at Vgs is 43 nC, facilitating fast switching.
It comes in a PowerPAK (8x8L) surface mount package.
This model features a 4-pin configuration for stable and efficient mounting.
Yes, it is qualified to meet the AEC-Q101 automotive standard.
This device is an N-channel MOSFET operating in depletion mode.
The dimensions of this model are 6.15 mm in length and 4.9 mm in width.
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