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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SiR516DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 63.7A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.01Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 20V |
Vishay SiR516DP-T1-RE3 is a Gen IV trench power N-Channel MOSFET designed for high-performance industrial and automotive use. The device offers a maximum continuous drain current of 63.7 A and a drain-source voltage rating of 60 V, operating in depletion channel mode to provide precise control in power circuits.
This MOSFET uses the PowerPAK SO-8 8-pin package type, optimized for surface mounting on printed circuit boards, which combines low parasitic inductance with compact footprint. Its ultra-low drain-source resistance of 0.01 Ω ensures minimal conduction losses, improving efficiency in power management systems.
The SiR516DP-T1-RE3 has a maximum power dissipation of 83 W, supporting continuous heavy load operation with thermal robustness. It supports a wide operating temperature range from -55°C to 125°C, enabling reliable deployment in demanding environments including automotive and industrial machinery.
The device features a maximum gate-source voltage of ±20 V and a typical gate charge of 56 nC at 6 V threshold, making it suitable for fast switching applications such as synchronous rectification and motor drives. Vishay's engineering ensures the transistor meets the AEC-Q101 automotive quality standard, making it well-suited for automotive electronic systems.
Applications include power supplies, motor drives, synchronous rectification circuits, and general-purpose switching where low losses and high reliability are critical. This MOSFET is an excellent component choice for design engineers working in automotive, industrial power electronics, and consumer electronic sectors.
Operates in depletion mode for controlled switching and power efficiency. Equipped with 8-pin PowerPAK SO-8 package suitable for surface mounting. Maximum power dissipation rating of 83 W ensures robust heat handling. Very low drain-source resistance of 0.01 Ω reduces conduction losses.
Supports operating temperatures from -55°C up to 125°C for wide industrial use. Typical gate charge of 56 nC at gate-source voltage makes switching efficient. AEC-Q101 automotive standard certified for reliability under automotive conditions.
Gate-source voltage maximum rating of 20 V for safe operation margins. Ideal for power supply, motor drive control, and synchronous rectification applications. Browse the Electronics & Electricals category on EnvMart to explore a wide range of Power MOSFETs and semiconductor components from top brands including Vishay.
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