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Vishay N-Channel MOSFET 7-Pin SC-70 Surface Mount 100 V 9 A 13.6 W Power TrenchFET AEC-Q101 SQA700CEJW-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 2.05mm |
| Model | SQA700CEJW-T1_GE3 |
| Width | 2.05mm |
| Mount Type | Surface |
| Series | N-Channel 100 V |
| Maximum Operating Temperature | 175°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 7 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 990mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 13.6W |
| Typical Gate Charge Qg @ Vgs | 6.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 860mV |
Key Features
- Supports a maximum continuous drain current of 9 amperes for robust performance.
- Operates at a maximum drain-source voltage of 100 volts, suitable for medium voltage circuits.
- Features a low maximum drain-source resistance of 990 milliohms to reduce conduction losses.
- Maximum power dissipation is rated at 13.6 watts, ensuring thermal stability with proper heatsinking.
- Ultra-compact 7-pin SC-70 package with dimensions 2.05mm by 2.05mm for space-saving PCB layouts.
- Wide operating temperature range from -55°C to 175°C, certified under automotive standard AEC-Q101.
- Typical gate charge of 6.2 nanocoulombs for efficient switching capabilities.
- Designed with TrenchFET technology and wettable flank terminals to enhance reliability and ease of inspection.
Product Description
Vishay SQA700CEJW-T1_GE3 is a high-quality N-Channel MOSFET housed in a compact 7-Pin SC-70 surface mount package measuring 2.05mm by 2.05mm. It operates efficiently with a maximum continuous drain current of 9 A and withstands voltages up to 100 V, making it ideal for electronic circuits requiring reliable switching under moderate power conditions.
This component supports a maximum power dissipation of 13.6 W, allowing it to handle significant thermal loads with adequate cooling. The device features a low maximum drain-source resistance of 990 mΩ, reducing conduction losses and improving overall circuit efficiency.
Designed using TrenchFET power MOSFET technology, the SQA700CEJW-T1_GE3 offers enhanced performance and durability. It complies with the AEC-Q101 automotive standard, confirming its robustness for automotive and other high-reliability applications. Its wide operating temperature range from -55°C to 175°C ensures stable operation in harsh environments.
The device has a typical gate charge of 6.2 nC at gate-source voltage, supporting fast switching performance. Additionally, wettable flank terminals are incorporated for improved solder joint reliability and inspection ease.
This MOSFET is optimized for a variety of applications including industrial power management, automotive electronics, and general-purpose switching tasks in commercial and laboratory environments.
Supports a maximum continuous drain current of 9 amperes for robust performance. Operates at a maximum drain-source voltage of 100 volts, suitable for medium voltage circuits. Features a low maximum drain-source resistance of 990 milliohms to reduce conduction losses.
Maximum power dissipation is rated at 13.6 watts, ensuring thermal stability with proper heatsinking. Ultra-compact 7-pin SC-70 package with dimensions 2.05mm by 2.05mm for space-saving PCB layouts. Wide operating temperature range from -55°C to 175°C, certified under automotive standard AEC-Q101.
Typical gate charge of 6.2 nanocoulombs for efficient switching capabilities. Designed with TrenchFET technology and wettable flank terminals to enhance reliability and ease of inspection. Explore the extensive range of electronic components available to find the best fit for your project requirements with confidence at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9 amperes.
It operates at a maximum drain-source voltage of 100 volts.
The maximum power dissipation is rated at 13.6 watts, allowing for significant thermal loads with proper heatsinking.
This model is housed in a 7-pin SC-70 package with dimensions of 2.05mm by 2.05mm.
The maximum drain-source resistance is 990 milliohms, which helps reduce conduction losses.
The typical gate charge is 6.2 nanocoulombs at gate-source voltage.
It has a wide operating temperature range from -55°C to 175°C.
Yes, it is certified under the AEC-Q101 automotive standard, confirming its suitability for high-reliability applications.
This model features an N-channel configuration.
This MOSFET is designed for surface mount applications.
The maximum gate-source voltage for this model is 20 volts.
It is optimized for industrial power management, automotive electronics, and general-purpose switching tasks.
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