Infineon N-Channel MOSFET, 35 A, 600 V, Enhancement Mode, TO-220 Package, 3-Pin IPP60R060C7XKSA1

The Infineon IPP60R060C7XKSA1 is a high-performance N-Channel MOSFET designed for power electronics applications requiring robust switching and low conduction losses. This device is housed in a TO-220 package with 3 pins suitable for through-hole mounting, ensuring easy integration on power boards.

Rated for a maximum continuous drain current of 35 amperes and a maximum drain-source voltage of 600 volts, this MOSFET operates in enhancement mode providing efficient power control for industrial, electronic component manufacturing, automotive, and power supply design applications. Its rugged body diode and reduced switching loss parameters such as low gate charge (68 nC) and drain-source resistance (60 mΩ) contribute to its best-in-class performance in power factor correction (PFC) circuits, hard-switching topologies, and high-power-density charger designs.

The maximum power dissipation of 162 watts and operating temperature range from -55°C to 150°C allow reliable functioning under demanding thermal environments. The device is engineered for applications involving switching frequencies that benefit from its reduced switching loss and high frequency capabilities.

Critical technical specifications include a maximum gate-source voltage of 20 V and a forward voltage drop of 900 mV, supporting efficient conduction performance. The physical dimensions of the device are compact with a length of 10.36 mm, width of 4.57 mm, and height of 9.45 mm, optimizing space in electronic assemblies.

Enhancement mode N-channel MOSFET provides robust switching performance. Maximum continuous drain current of 35 A for high current handling capability. Drain-source voltage rating of 600 V suitable for high voltage requirements.

TO-220 3-pin package supports through-hole mounting for ease of installation. Low gate charge of 68 nC reduces switching losses. Maximum power dissipation of 162 W ensures thermal resilience. Wide operating temperature range from -55°C to 150°C enables diverse application use.

Compact physical dimensions suitable for dense power electronics designs.

This MOSFET is ideally suited for industrial power supplies, automotive electronics, electronics manufacturing, and power management systems where high efficiency and reliability are critical. Its outstanding balance of low loss and high switching speed makes it a preferred choice for power conversion and control applications.

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