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Infineon N-Channel Depletion MOSFET, 120 mA Continuous Drain Current, 600 V Drain Source Voltage, 1.8 W Power BSP135IXTSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.8mm
Length 6.7mm
Model BSP135IXTSA1
Width 3.7mm
Mount Type Surface
Series BSP135I
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 120mA
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 60Ω
Channel Mode Depletion
Maximum Power Dissipation Pd 1.8W
Typical Gate Charge Qg @ Vgs 3.7nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Supports a continuous drain current of 120 mA for low-power applications.
  • Operates with a maximum drain-source voltage of 600 V for high-voltage switching.
  • Features a maximum power dissipation of 1.8 watts supporting moderate thermal loads.
  • Packaged in a 4-pin SOT-223 surface-mount package for compact PCB assembly.
  • Depletion mode operation allows switching and current control in demanding conditions.
  • Typical gate charge of 3.7 nC ensures predictable switching performance.
  • Robust maximum gate-source voltage of 20 V for gate reliability.
  • Wide operating temperature range from -55°C to 150°C suits harsh environments.

Product Description

Infineon BSP135IXTSA1 N-Channel Depletion MOSFET is a specialized semiconductor component designed to provide efficient power control in electronic and automotive applications. It features a surface-mount 4-pin SOT-223 package, facilitating compact integration into printed circuit boards.

This component operates with a maximum drain-source voltage rating of 600 volts and supports continuous drain currents up to 120 milliamps. Its depletion mode channel enables it to function as a reliable switching and current-limiting device in industrial and automotive electronic circuits.

With a maximum power dissipation of 1.8 watts, the device supports steady operation under moderate thermal loads. The typical gate charge of 3.7 nanocoulombs provides predictable switching behavior essential for circuit design accuracy. The component allows a maximum gate-source voltage of 20 volts, ensuring robust gate protection under normal and transient conditions.

Designed for operation across a broad temperature range from minus 55 to 150 degrees Celsius, the BSP135IXTSA1 is well-suited for thermal-stressed and harsh industrial environments. Its low maximum drain-source on-resistance of 60 ohms contributes to efficient conduction and reduced energy loss.

This MOSFET model meets the AEC-Q101 automotive standard, guaranteeing high reliability and ruggedness required for vehicle electronics and other demanding applications. Supports continuous drain current of 120 mA. Maximum drain-source voltage of 600 V.

Power dissipation up to 1.8 W. Compact 4-pin SOT-223 surface-mount package. Depletion mode N-channel device. Typical gate charge of 3.7 nC for stable switching. Maximum gate-source voltage of 20 V. Operating temperature range from -55°C to 150°C.

Maximum drain-source resistance of 60 Ω. Complies with AEC-Q101 automotive standard.

This MOSFET is primarily intended for use in high-voltage switching circuits, power supplies, automotive electronics, and compact board assemblies requiring dependable surface-mount semiconductors. It is ideal for current-limiting and sensing functions, especially in thermally challenging environments.

Explore Infineon products and related MOSFETs on EnvMart for industrial, automotive, and electronics manufacturing use.

Infineon N-Channel Depletion MOSFET, 120 mA Continuous Drain Current, 600 V Drain Source Voltage, 1.8 W Power BSP135IXTSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 120 mA.

It operates with a maximum drain-source voltage of 600 V.

The maximum power dissipation for this unit is 1.8 watts.

This model is packaged in a 4-pin SOT-223 surface-mount package.

The typical gate charge is 3.7 nanocoulombs (nC).

The maximum gate-source voltage for this device is 20 V.

It operates within a temperature range from -55°C to 150°C.

The maximum drain-source resistance is 60 ohms (Ω).

This unit complies with the AEC-Q101 automotive standard.

It features an N-channel depletion mode operation.

The dimensions are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.

This MOSFET is intended for high-voltage switching circuits, power supplies, and automotive electronics.

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