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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | BSP135IXTSA1 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | BSP135I |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120mA |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 60Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 3.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Infineon BSP135IXTSA1 N-Channel Depletion MOSFET is a specialized semiconductor component designed to provide efficient power control in electronic and automotive applications. It features a surface-mount 4-pin SOT-223 package, facilitating compact integration into printed circuit boards.
This component operates with a maximum drain-source voltage rating of 600 volts and supports continuous drain currents up to 120 milliamps. Its depletion mode channel enables it to function as a reliable switching and current-limiting device in industrial and automotive electronic circuits.
With a maximum power dissipation of 1.8 watts, the device supports steady operation under moderate thermal loads. The typical gate charge of 3.7 nanocoulombs provides predictable switching behavior essential for circuit design accuracy. The component allows a maximum gate-source voltage of 20 volts, ensuring robust gate protection under normal and transient conditions.
Designed for operation across a broad temperature range from minus 55 to 150 degrees Celsius, the BSP135IXTSA1 is well-suited for thermal-stressed and harsh industrial environments. Its low maximum drain-source on-resistance of 60 ohms contributes to efficient conduction and reduced energy loss.
This MOSFET model meets the AEC-Q101 automotive standard, guaranteeing high reliability and ruggedness required for vehicle electronics and other demanding applications. Supports continuous drain current of 120 mA. Maximum drain-source voltage of 600 V.
Power dissipation up to 1.8 W. Compact 4-pin SOT-223 surface-mount package. Depletion mode N-channel device. Typical gate charge of 3.7 nC for stable switching. Maximum gate-source voltage of 20 V. Operating temperature range from -55°C to 150°C.
Maximum drain-source resistance of 60 Ω. Complies with AEC-Q101 automotive standard.
This MOSFET is primarily intended for use in high-voltage switching circuits, power supplies, automotive electronics, and compact board assemblies requiring dependable surface-mount semiconductors. It is ideal for current-limiting and sensing functions, especially in thermally challenging environments.
Explore Infineon products and related MOSFETs on EnvMart for industrial, automotive, and electronics manufacturing use.
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