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Infineon CoolMOS N-Channel MOSFET 76 A, 600 V Enhancement Mode, 4-Pin TO-247 IPZA60R037P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 15.9mm |
| Model | IPZA60R037P7XKSA1 |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 76A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 37mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 121nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Supports a maximum continuous drain current of 76 amperes.
- Operates at a maximum drain-source voltage of 600 volts.
- Features a low drain-source resistance (Rds) of 37 milliohms for efficient conduction.
- Enhancement mode channel with a 4-pin surface mount TO-247 package.
- Capable of dissipating up to 255 watts of power during operation.
- Typical gate charge of 121 nanocoulombs at Vgs.
- Designed to operate between -55°C to 150°C.
- Maximum gate-source voltage rating of 20 volts.
Product Description
Infineon IPZA60R037P7XKSA1 is a CoolMOS N-Channel MOSFET that handles a maximum continuous drain current of 76 A and a drain-source voltage of 600 V. Featuring the advanced 7th generation CoolMOS technology, it provides significant reductions in switching and conduction losses suitable for high voltage power switching and conversion applications.
This device is packaged in a robust 4-pin TO-247 surface mount package, designed to withstand operating temperatures ranging from -55°C to 150°C, making it ideal for industrial, power management, and automation settings.
The MOSFET offers a low on-resistance of 37 milliohms which improves efficiency and thermal performance in power circuits. It has a typical gate charge of 121 nC which aids in fast switching operations, paired with a maximum gate-source voltage rating of 20 V ensuring robust gate control.
The physical dimensions are compact with a length of 15.9 mm, width of 5.1 mm, and height of 21.1 mm, supporting integration into diverse PCB designs. The typical forward voltage of 900 mV allows for optimized conduction losses during operation.
This product does not carry automotive or other specific industry certifications, but it excels in applications requiring high voltage, high current switching with good ESD robustness above 2 kV HBM.
Ideal for industrial electronics, power supplies, motor drives, and renewable energy systems, the IPZA60R037P7XKSA1 MOSFET enables efficient power conversion and management with reliable performance over a wide temperature range.
Supports a maximum continuous drain current of 76 amperes. Operates at a maximum drain-source voltage of 600 volts. Features a low drain-source resistance (Rds) of 37 milliohms for efficient conduction. Enhancement mode channel with a 4-pin surface mount TO-247 package.
Capable of dissipating up to 255 watts of power during operation. Typical gate charge of 121 nanocoulombs at Vgs. Designed to operate between -55°C to 150°C. Maximum gate-source voltage rating of 20 volts. Compact dimensions with length 15.9 mm, width 5.1 mm, and height 21.1 mm.
Forward voltage typical value is 900 millivolts for efficient switching. Explore more power semiconductor devices and MOSFETs on EnvMart for a variety of industrial, laboratory, and commercial applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 76 amperes.
It operates at a maximum drain-source voltage of 600 volts.
This unit features a low drain-source resistance (Rds) of 37 milliohms, which enhances conduction efficiency.
The physical dimensions of the TO-247 package are 15.9 mm in length, 5.1 mm in width, and 21.1 mm in height.
The typical gate charge at Vgs is 121 nanocoulombs.
It is capable of dissipating up to 255 watts of power during operation.
This MOSFET is designed to operate within a temperature range of -55°C to 150°C.
The maximum gate-source voltage rating for this model is 20 volts.
It features an enhancement mode N-channel type.
It is suitable for industrial electronics, power supplies, motor drives, and renewable energy systems.
The typical forward voltage is 900 millivolts, which aids in optimizing conduction losses.
The TO-247 package has a pin count of 4.
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