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Vishay TrenchFET Type P-Channel MOSFET, 12 A, 12 V Enhancement Mode, 6-Pin SC-70 Package SIA447DJ-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 0.8mm |
| Length | 1.7mm |
| Model | SIA447DJ-T1-GE3 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 71mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 19W |
| Typical Gate Charge Qg @ Vgs | 52nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- Designed with TrenchFET technology for enhanced switching performance.
- Supports maximum power dissipation of 19 watts.
- Operating temperature range from -55°C to 150°C ensures reliability.
- Low on-resistance of 71 milliohms minimizes power loss.
- Typical gate charge at 5 V gate-source voltage is 52 nanocoulombs.
- Maximum gate-source voltage rating of ±8 V.
- Forward voltage drop of approximately -1.2 V improves efficiency.
- Compact dimensions of 1.7 mm length and width with 0.8 mm height ideal for surface mounting.
Product Description
Vishay SIA447DJ-T1-GE3 is a high-performance TrenchFET Type P-Channel MOSFET designed for switching and amplification applications in electronic circuits. It delivers a maximum continuous drain current of 12 A and operates with a maximum drain-source voltage of 12 V, making it suitable for low voltage power management systems.
This enhancement mode MOSFET is packaged in a compact 6-pin SC-70 surface-mount package, allowing for optimized PCB space utilization in dense electronics assemblies. Its TrenchFET technology ensures low resistance and improved switching speed, which helps in reducing overall power losses and enhancing efficiency.
The device supports a maximum power dissipation of 19 W and operates reliably within a temperature range from -55°C to 150°C, enabling use in demanding industrial, automotive, and consumer electronic applications. The typical gate charge under a 5 V gate-source voltage is 52 nC, facilitating efficient driving with low power consumption on the gate.
Additionally, the MOSFET features a gate-source voltage rating of ±8 V and a forward voltage drop of about -1.2 V, contributing to better performance in switching circuits. Its physical dimensions - 1.7 mm in length and width, and 0.8 mm in height - make it compatible with automated surface-mount assembly processes.
This component is ideal for use in power management, load switching, and signal processing across various sectors including industrial electronics, automotive systems, and consumer devices requiring compact, reliable power semiconductors.
Designed with TrenchFET technology for enhanced switching performance. Supports maximum power dissipation of 19 watts. Operating temperature from -55°C to 150°C ensures durability. Low on-resistance of 71 milliohms reduces thermal losses.
Typical gate charge of 52 nanocoulombs supports efficient gate drive. Gate-source voltage tolerance of ±8 volts. Forward voltage drop of -1.2 volts optimizes conduction efficiency. Compact 6-pin SC-70 surface mount package.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 A.
It has a maximum drain-source voltage rating of 12 V.
The operating temperature range is from -55°C to 150°C.
The typical gate charge at a 5 V gate-source voltage is 52 nanocoulombs.
The forward voltage drop is approximately -1.2 V.
The dimensions of the SC-70 package are 1.7 mm in length and width, and 0.8 mm in height.
This model supports a maximum power dissipation of 19 watts.
The on-resistance is 71 milliohms, which minimizes power loss.
The package has 6 pins.
It is designed for surface mounting.
The maximum gate-source voltage rating is ±8 V.
This MOSFET is suitable for power management, load switching, and signal processing applications.
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