$3.47
$3.36
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon CoolMOS N-Channel MOSFET 19 A 650 V TO-220 Enhancement 3-Pin IPP60R120C7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.36mm |
| Model | IPP60R120C7XKSA1 |
| Width | 15.95mm |
| Mount Type | Surface |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 120mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 92W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Features TO-220 package with 3 pins for efficient surface mounting.
- Maximum continuous drain current of 19 amps for high power handling.
- High voltage rating of 650 volts suitable for demanding power electronics.
- Enhancement channel mode ensures effective voltage-controlled transistor operation.
- Low drain-source resistance of 120 milliohms minimizes power loss.
- Maximum power dissipation of 92 watts allowing robust operation under load.
- Wide operating temperature range from -55°C up to 150°C for industrial applications.
- Typical gate charge of 34 nanocoulombs at gate-source voltage for fast switching.
Product Description
Infineon IPP60R120C7XKSA1 is a high-performance CoolMOS N-Channel MOSFET designed for reliable switching and power management in industrial, electronic, and power supply applications. It features a 19 amp maximum continuous drain current with a robust 650 volt drain-source voltage rating, making it ideal for high voltage DC-DC converters, power inverters, and motor control systems.
The device comes in a TO-220 package with 3 pins, optimized for surface mount applications to ensure ease of installation and thermal management. Its low on-resistance of 120 milliohms helps to minimize conduction losses, supporting energy-efficient designs.
This MOSFET operates in enhancement mode, controlled by voltage applied to the gate terminal, providing precise control of current flow. It supports a wide operating temperature range from -55°C to 150°C, suitable for harsh environmental conditions encountered in industrial and automotive-grade systems.
The typical gate charge of 34 nanocoulombs at a gate-source voltage of 20 volts facilitates high-speed switching required in modern power electronics. Physical dimensions (length 10.36mm, width 15.95mm, height 4.57mm) enable compact PCB layouts.
TO-220 3-pin surface mount package. Maximum drain current: 19 A. Drain-source voltage rating: 650 V. Enhancement mode N-channel MOSFET. Low Rds(on) of 120 mΩ reduces power losses. Power dissipation capacity of 92 W. Operating temperature range: -55°C to 150°C.
Typical gate charge: 34 nC at Vgs = 20 V. Compact physical dimensions supporting dense assemblies.
This Infineon MOSFET is suitable for use in power electronics, industrial control equipment, automotive systems, and electronic component manufacturing. It meets RoHS compliance and Pb-free lead plating standards.
Explore our comprehensive range of semiconductor components and power transistors to support your design and manufacturing needs on EnvMart.
Explore more products in our Power MOSFET category.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 19 A.
The drain-source voltage rating is 650 V, making it suitable for high voltage applications.
It comes in a TO-220 package with a 3-pin configuration, optimized for surface mounting.
This MOSFET operates within a temperature range of -55°C to 150°C.
The typical gate charge is 34 nanocoulombs at a gate-source voltage of 20 volts.
The maximum power dissipation capacity is 92 W, allowing for robust operation under load.
The low drain-source resistance is 120 milliohms, which helps minimize power loss.
It is suitable for high voltage DC-DC converters, power inverters, and motor control systems.
This model features an N-channel configuration, operating in enhancement mode.
The dimensions are length 10.36 mm, width 15.95 mm, and height 4.57 mm.
The maximum gate-source voltage is 20 V, allowing for effective control of the MOSFET.
The country of origin for this model is India.
Related Products
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$3.47
$3.36
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent