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Infineon N-Channel MOSFET, 3 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R2K0P7SATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | IPN70R2K0P7SATMA1 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | IPN70R |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6W |
| Typical Gate Charge Qg @ Vgs | 3.8nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 900mV |
Key Features
- High 700 V drain-source voltage rating suitable for power switching.
- 3 A maximum continuous drain current supports moderate load currents.
- Low 2 Ω maximum drain-source resistance reduces conduction losses.
- Typical gate charge of 3.8 nC enables efficient switching.
- Maximum gate-source voltage rating of 16 V ensures safe gate drive control.
- 6 W power dissipation capability with surface-mount SOT-223 package.
- Wide operating temperature range from -40°C up to 150°C.
- Compact 3-pin SOT-223 form factor suitable for space-constrained designs.
Product Description
Infineon IPN70R2K0P7SATMA1 is a high-voltage N-Channel MOSFET designed for surface-mounted power switching applications requiring elevated drain-source voltages up to 700 V and continuous drain currents of 3 A.
This enhancement-mode MOSFET features a maximum drain-source resistance of 2 Ω, minimizing conduction losses under operational loads. It has a typical gate charge of 3.8 nC which reduces switching energy, allowing for efficient operation in switching power supplies.
The device supports gate-source voltages up to 16 V and can dissipate up to 6 W of power safely using its SOT-223 surface mount package with thermal management capabilities.
This MOSFET operates reliably across a wide temperature range, from -40°C to 150°C, making it suitable for diverse industrial, power supply, lighting driver, and industrial control equipment applications where compact, efficient, high-voltage switches are essential.
High-voltage operation with 700 V drain-source rating allows use in demanding power circuits. Continuous 3 A current rating meets moderate power requirements. Low conduction loss from 2 Ω Rds(on) maximizes efficiency. Compact surface mount SOT-223 package aids in space-saving PCB layouts.
Wide operating temperature range suitable for robust industrial environments.
Its combination of high voltage, moderate current capability, and compact package makes the Infineon IPN70R2K0P7SATMA1 MOSFET ideal for power management in electronic devices, industrial controls, and lighting circuits.
Explore more high-quality power semiconductors and MOSFETs in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum drain-source voltage rating is 700 V, making it suitable for high-voltage power switching applications.
This model can handle a maximum continuous drain current of 3 A, supporting moderate load currents.
It has a maximum power dissipation capability of 6 W, which is suitable for its SOT-223 surface mount package.
The typical gate charge is 3.8 nC, which helps in reducing switching energy and improving efficiency.
The dimensions of the SOT-223 package are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.
This MOSFET operates reliably across a wide temperature range from -40°C to 150°C.
The maximum gate-source voltage rating for this device is 16 V, ensuring safe gate drive control.
The maximum drain-source resistance is 2 Ω, which minimizes conduction losses during operation.
It uses a surface mount type, specifically designed for compact PCB layouts.
This model features an N-channel configuration, suitable for enhancement-mode applications.
It is suitable for power management in electronic devices, industrial controls, and lighting circuits.
The country of origin for this MOSFET is India.
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