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Infineon HEXFET N-Channel Power MOSFET, 171 A, 150 V, Enhancement Mode, 3-Pin TO-247AC IRFP4568PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP4568PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 171A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 5.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 517W |
| Typical Gate Charge Qg @ Vgs | 151nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.3V |
Key Features
- Designed for high efficiency with low on-resistance enhancing power savings.
- Handles maximum power dissipation of 517 W for demanding applications.
- Wide temperature range operation from -55°C to 175°C for reliability in harsh environments.
- Enhancement mode transistor with robust HEXFET architecture.
- Package facilitates effective thermal management and through-hole mounting.
- Includes robust gate threshold voltages for optimized switching performance.
- Ideal for motor control, synchronous rectification, and high-speed switching circuits.
- Single transistor configuration simplifies circuit design integration.
Product Description
Infineon IRFP4568PBF HEXFET N-Channel Power MOSFET is engineered to deliver superior performance in power management and switching circuits. With a continuous drain current rating of 171 A and a maximum drain-source voltage of 150 V, this enhancement mode MOSFET combines efficiency with reliability.
Its TO-247AC package enables excellent thermal dissipation and supports through-hole mounting, providing robust mechanical stability and ease of assembly in industrial, automotive, and electronics applications.
The device features low on-resistance (5.9 mΩ) to minimize conduction losses, enhancing overall system efficiency. It is capable of dissipating up to 517 W of power, making it suitable for high-demand power electronics tasks.
Operating over a wide temperature range from -55°C to +175°C, the IRFP4568PBF MOSFET ensures reliable performance under diverse environmental conditions. The typical gate charge of 151 nC at 10 V gate-source voltage facilitates fast switching with low losses, optimizing high-frequency circuit design.
Applications include high-efficiency synchronous rectification, uninterruptible power supplies, motor control circuits, and high-speed power switching tasks. The device is designed for hard-switched and high-frequency conditions.
Enhanced body diode recovery characteristics improve device reliability. Low forward voltage enables efficient conduction with minimal losses. Wide gate-source voltage range offers flexible circuit adaptations. Single transistor package streamlines board design.
Robust build supports extended operational lifetime. Ideal for industrial, automotive, power supply, and electronic manufacturing applications.
Explore high-performance power semiconductors like this Infineon HEXFET N-Channel MOSFET within EnvMart's comprehensive industrial electronics catalog to optimize your design and application requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 171 A.
It has a maximum drain-source voltage rating of 150 V.
The IRFP4568PBF can handle a maximum power dissipation of 517 W.
The maximum drain-source resistance (Rds) is 5.9 mΩ.
It operates over a wide temperature range from -55°C to 175°C.
This model uses a TO-247AC package type, which supports through-hole mounting.
The typical gate charge at a gate-source voltage of 10 V is 151 nC.
It is suitable for applications such as motor control, synchronous rectification, and high-speed switching circuits.
This MOSFET has a pin count of 3.
The forward voltage (Vf) is 1.3 V.
The maximum gate-source voltage (Vgs) is -30 V to +30 V.
The channel type of this MOSFET is N-Channel, operating in enhancement mode.
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