$0.97
$0.94
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon CoolMOS P7 N-Channel MOSFET 16 A 650 V Enhancement 3-Pin TO-220 IPA60R600P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA60R600P7XKSA1 |
| Mount Type | Surface |
| Series | CoolMOS P7 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
Key Features
- Features CoolMOS P7 technology for high energy efficiency and low gate charge.
- Designed for enhancement mode operation with a low on-resistance of 600 mΩ.
- Supports surface mount type and optimized for both hard and resonant switching topologies.
- Ensures ruggedness during hard commutation in LLC converter topologies.
- Ideal for a broad range of consumer and industrial electronic applications.
- Complies with RoHS and environmental directives, without automotive standards.
- Compact 3-pin TO-220 package provides ease of integration on PCBs.
Product Description
Infineon IPA60R600P7XKSA1 is a CoolMOS P7 N-Channel MOSFET featuring a maximum continuous drain current of 16 A and a drain-source voltage rating of 650 V. Packaged in a 3-pin TO-220 surface mount, this enhancement mode MOSFET combines high efficiency with ease of use, making it suitable for demanding power electronic designs.
This 7th generation CoolMOS device provides best-in-class on-resistance times area (Ron×A) values and inherently low gate charge (QG), which contributes to superior energy efficiency and reduced switching losses.
Engineered to perform reliably in both hard-switching and resonant topologies such as power factor correction (PFC) and LLC converters, it offers excellent ruggedness during hard commutation of the body diode, enhancing durability in complex circuits.
The IPA60R600P7XKSA1 is applicable across a wide range of industrial power electronic systems and is well-suited to consumer electronics due to its optimized switching characteristics and conduction efficiency.
Key electrical characteristics include a maximum drain-source resistance of 600 milliohms and support for enhancement mode operation, enabling effective switching control. High efficiency CoolMOS P7 technology reduces conduction and switching losses.
Robust body diode performance optimizes operation in resonant topologies. Compact TO-220 package facilitates thermal management and PCB layout flexibility. Suitable for industrial and consumer power electronics applications.
Compliance with environmental standards assures safe deployment. This MOSFET is a reliable choice for designers prioritizing efficiency and ruggedness in power electronics, found in power supplies, motor drives, and energy conversion equipment.
Discover more power semiconductors from Infineon at EnvMart to enhance your electronic product designs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The Infineon IPA60R600P7XKSA1 has a maximum continuous drain current of 16 A.
This model has a maximum drain-source voltage rating of 650 V.
The maximum drain-source resistance for this MOSFET is 600 milliohms (600 mΩ).
It is packaged in a compact 3-pin TO-220 package, which facilitates thermal management and PCB layout flexibility.
This model features an N-channel type for enhancement mode operation.
It is suitable for a broad range of industrial power electronic systems and consumer electronics, particularly in power supplies and motor drives.
CoolMOS P7 technology provides high energy efficiency and low gate charge, contributing to reduced switching losses and improved performance.
Yes, it complies with RoHS and environmental directives, ensuring safe deployment in various applications.
It is optimized for both hard-switching and resonant topologies, including applications like power factor correction (PFC) and LLC converters.
The robust body diode performance enhances operation in resonant topologies, contributing to reliability in complex circuits.
The country of origin for this MOSFET is India.
This model features a pin count of 3, suitable for various applications.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$23.16
$20.22
-12.7%
New
$0.97
$0.94
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent