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Infineon HEXFET N-Channel MOSFET, 9.3 A, 250 V Enhancement Mode, 3-Pin TO-252 Package AUIRFR4292TRL
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.22mm |
| Model | AUIRFR4292TRL |
| Width | 6.73mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.3A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 345mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- The MOSFET features a TO-252 package with 3 pins for surface mounting.
- It operates in enhancement mode with ultra-low on-resistance of 345 milliohms.
- Maximum power dissipation is rated at 100 W for reliable thermal performance.
- Suitable for automotive and industrial applications with AEC-Q101 qualification.
- Wide operating temperature range from -55°C up to 175°C ensures robustness.
- Typical gate charge is 13 nC at a gate-source voltage of 10 V for fast switching.
- Maximum gate-source voltage rating is ±20 V, allowing flexibility in gate drive design.
- Forward voltage drop is approximately 1.3 V enhancing efficiency in conduction.
Product Description
Infineon AUIRFR4292TRL HEXFET N-Channel MOSFET with a maximum continuous drain current of 9.3 A and drain-source voltage rating of 250 V is designed for advanced power switching applications.
This device utilizes state-of-the-art processing technology to provide ultra-low on-resistance, enabling efficient power handling and reduced heat generation. The MOSFET is housed in a TO-252 surface-mount package with 3 pins, suited for compact end-use products and printed circuit board mounting.
Performance is optimized for automotive-grade demands, including AEC-Q101 automotive standard compliance and operation over a wide temperature range from -55°C to 175°C. It features a low typical gate charge of 13 nC at Vgs=10 V for high-speed switching, suitable in industrial motor drives, power supplies, and automotive electronic systems.
The MOSFET has an ultra-low on-resistance of 345 milliohms, minimizing conduction losses. Maximum power dissipation of 100 W supports heavy-duty applications. Forward voltage drop of 1.3 V contributes to energy efficiency.
Compact physical size allows flexible PCB design. The device is lead-free and RoHS compliant, aligning with environmental standards. Typical applications include automotive electronics, industrial power management, and general-purpose switching.
This Infineon HEXFET MOSFET represents a reliable and efficient choice for electronic designers seeking performance and durability. Explore more Infineon power semiconductors and MOSFET solutions with EnvMart's comprehensive catalog.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.3 A.
This MOSFET has a maximum drain-source voltage rating of 250 V.
It features an ultra-low on-resistance of 345 milliohms.
The typical gate charge is 13 nC at a gate-source voltage of 10 V.
This model comes in a TO-252 package with 3 pins for surface mounting.
It operates over a wide temperature range from -55°C to 175°C.
The maximum power dissipation for this device is rated at 100 W.
Yes, it complies with the AEC-Q101 automotive standard.
Typical applications include automotive electronics, industrial power management, and general-purpose switching.
The forward voltage drop is approximately 1.3 V.
The dimensions are 6.22 mm in length, 6.73 mm in width, and 2.39 mm in height.
It has an N-channel type, operating in enhancement mode.
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