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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 29.75mm |
| Length | 16.15mm |
| Model | IPA50R950CEXKSA2 |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | 500V CoolMOS CE |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.6A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 950mΩ |
| Channel Mode | N |
| Typical Gate Charge Qg @ Vgs | 12.4nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 830mV |
Infineon IPA50R950CEXKSA2 is a 500V CoolMOS CE N-Channel MOSFET designed for high voltage power switching applications. Featuring superjunction technology, it provides fast switching capability with excellent cost-performance ratio. This MOSFET is housed in a durable 3-pin TO-220 package with through hole mount, facilitating straightforward PCB mounting and thermal management.
With a maximum continuous drain current of 6.6 A and a drain source voltage rating of 500 V, it is suitable for various industrial, power electronics, and electronic component manufacturing uses. Its low on-resistance of 950 mΩ contributes to overall system efficiency by reducing conduction losses.
The device operates over a wide temperature range from -40°C to 150°C, allowing for reliable performance in demanding environments including HVAC, industrial automation, and power supply systems. Typical gate charge of 12.4 nC at 30 V gate-source voltage ensures efficient switching with low gate drive power.
The MOSFET is lead-free and halogen-free, aligning with global environmental policies. It incorporates easy-to-drive features and rugged construction for commutation tolerance. The compact dimensions (29.75mm height, 16.15mm length, 4.9mm width) aid in high-density PCB layouts.
Superjunction technology for fast switching and low losses. Maximum continuous drain current 6.6 A. Maximum drain-source voltage 500 V. TO-220 package with through hole mount. Low on-resistance of 950 mΩ. Wide operating temperature range (-40°C to 150°C).
Typical gate charge 12.4 nC at 30 V gate-source voltage. Pb-free plating and halogen-free mold compound. Compact 3-pin design for easy PCB integration.
This Infineon MOSFET is ideal for use in industrial power management, manufacturing equipment, HVAC systems, and other electronics requiring reliable high voltage switching. Browse more Infineon semiconductors and MOSFET devices at EnvMart for comprehensive electronic component solutions.
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