Infineon CoolMOS 7 N-Channel MOSFET, 12 A, 600 V Enhancement Mode, 3-Pin TO-220 IPP60R210CFD7XKSA1

Infineon IPP60R210CFD7XKSA1 is a CoolMOS 7 N-Channel enhancement-mode MOSFET designed for high voltage and power switching applications. It features a maximum drain-source voltage of 600 V and supports continuous drain current of up to 12 A. The device comes in a durable TO-220 3-pin through-hole package, optimized for thermal management and ease of mounting.

The MOSFET's ultra-fast body diode and low typical gate charge of 23 nC at a 23 V gate voltage improve switching efficiency and reduce losses. With a maximum power dissipation rating of 64 W and an operating temperature range from -55°C to 150°C, this component is suitable for demanding industrial and power electronics environments.

Its low drain-source resistance (Rds(on)) of 210 milliohms ensures energy-efficient operation. The device’s mechanical dimensions allow straightforward incorporation into existing designs. Applications include power supplies, inverters, motor control, and other power management systems.

Infineon's CoolMOS 7 series technology provides enhanced ruggedness, best-in-class reverse recovery charge, and superior dv/dt and di/dt ruggedness of the reverse diode. This ensures dependable operation in demanding industrial, automotive, and commercial systems.

The product does not have specific automotive certification but meets general industrial standards. It is designed primarily to optimize high voltage power conversion efficiency while maintaining reliability.

Designed with CoolMOS 7 series technology for high voltage power applications. Operates in enhancement mode with a maximum drain-source resistance of 210 milliohms. Supports a maximum continuous drain current of 12 Amps at typical operating conditions.

Features ultra-fast body diode with low gate charge of 23 nanoCoulombs at 23 V gate voltage. Maximum power dissipation capacity is 64 Watts ensuring reliable thermal performance. Operating temperature range spans from -55°C to 150°C for demanding environments.

Compact TO-220 package with 3 pins allows easy integration into through-hole PCBs. Maximum gate-source voltage tolerance is 20 V with forward voltage of 900 millivolts. Dimensions approximately 29.95 mm height, 10.36 mm length, and 4.57 mm width.

Ideal for industrial, power management, and electronic applications requiring rugged MOSFET performance. Explore the Infineon MOSFET range and other semiconductor components at EnvMart for your industrial and electronic design projects.