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Infineon 650V CoolMOS CE N-Channel MOSFET, 15.1 A, 650 V, 3-Pin TO-220 IPA65R400CEXKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPA65R400CEXKSA1
Mount Type Through Hole
Series 650V CoolMOS CE
Package Type TO-220
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 15.1A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 400mΩ
Channel Mode N

Key Features

  • Offers very low conduction and switching losses for high efficiency.
  • Extremely low figure of merit (FOM Rdson*Qg) reduces power consumption.
  • Supports hard and soft switching applications.
  • Features very high commutation ruggedness for durability.
  • Easy to drive, enhancing user friendliness.
  • Complies with EDEC qualification, Pb-free plating and halogen-free mold compound.
  • Equipped with through-hole mount type and 3-pin TO-220 package.

Product Description

Infineon IPA65R400CEXKSA1 is a 650V CoolMOS CE N-Channel power MOSFET designed for efficient power switching applications. This device supports a maximum continuous drain current of 15.1 A and a maximum drain-source voltage of 650 V, making it suitable for a wide range of industrial, commercial, and electronic power control uses.

The CoolMOS™ CE series is a modern superjunction MOSFET family that delivers extremely low conduction and switching losses by minimizing the figure of merit (Rdson*Qg). This results in improved efficiency and reduced power dissipation, essential in power supply, motor control, and power management circuits.

The IPA65R400CEXKSA1 offers very high commutation ruggedness, making it capable of withstanding challenging switching conditions without degradation. Its easy-to-drive feature simplifies circuit design and integration. The device is packaged in a through-hole TO-220 case with 3 pins, facilitating reliable mounting in PCBs and heat sinking for thermal management.

This MOSFET is EDEC qualified, RoHS-compliant with Pb-free plating, and uses a halogen-free mold compound, ensuring compliance with environmental standards and reliability in demanding applications.

Typical applications include industrial power supplies, electronic lighting ballasts, motor controllers, and other switching power devices requiring efficient and robust MOSFET performance.

Offers very low conduction and switching losses for high efficiency. Extremely low figure of merit (FOM Rdson*Qg) reduces power consumption. Supports hard and soft switching applications. Features very high commutation ruggedness for durability.

Easy to drive, enhancing user friendliness. Complies with EDEC qualification, Pb-free plating and halogen-free mold compound. Equipped with through-hole mount type and 3-pin TO-220 package. Explore other high-quality MOSFETs and semiconductor components at EnvMart for reliable performance in your electronic and industrial projects.

Infineon 650V CoolMOS CE N-Channel MOSFET, 15.1 A, 650 V, 3-Pin TO-220 IPA65R400CEXKSA1
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Frequently Asked Questions

The maximum continuous drain current for the IPA65R400CEXKSA1 is 15.1 A.

This MOSFET can handle a maximum drain-source voltage of 650 V.

The IPA65R400CEXKSA1 is packaged in a TO-220 type housing.

The CoolMOS CE series offers very low conduction and switching losses, extremely low figure of merit (FOM Rdson*Qg), and very high commutation ruggedness.

This model has 3 pins.

The channel type of the IPA65R400CEXKSA1 is N-channel.

Yes, it supports both hard and soft switching applications.

The maximum drain-source resistance for the IPA65R400CEXKSA1 is 400 mΩ.

The country of origin for this MOSFET is India.

It supports through-hole mounting.

Typical applications include industrial power supplies, electronic lighting ballasts, and motor controllers.

The IPA65R400CEXKSA1 complies with EDEC qualification and is RoHS-compliant with Pb-free plating and halogen-free mold compound.

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