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DiodesZetex Dual DMP Type P-Channel MOSFET 3.1 A 20 V Enhancement 6-Pin UDFN-2020 DMP2045UFDB-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Model | DMP2045UFDB-7 |
| Mount Type | Surface |
| Series | DMP |
| Maximum Operating Temperature | 150°C |
| Package Type | UDFN-2020 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.1A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 0.09Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.29W |
| Typical Gate Charge Qg @ Vgs | 6.8nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | -0.75V |
| Transistor Configuration | Dual |
Key Features
- Dual P-channel enhancement MOSFET minimizing on-state resistance for efficient switching performance.
- Maximum continuous drain current of 3.1 amperes ensures reliable operation.
- Surface mount 6-pin UDFN-2020 package for compact PCB design.
- Low drain-source resistance (Rds) of 0.09 ohms reduces power loss.
- Operates in a temperature range from -55°C to 150°C for industrial environments.
- Maximum power dissipation of 1.29 watts supports robust power handling.
- Typical gate charge of 6.8 nanocoulombs allows fast switching.
- Meets RoHS compliance and automotive standards AEC-Q200, AEC-Q101, AEC-Q100 for quality assurance.
Product Description
DiodesZetex DMP2045UFDB-7 dual DMP type P-channel MOSFET is engineered for high efficiency in power management circuits. It features an enhancement mode configuration with a maximum continuous drain current of 3.1 A and maximum drain-source voltage of 20 V. The device comes in a compact 6-pin UDFN-2020 surface mount package, suitable for space-sensitive industrial and commercial electronic applications.
This MOSFET's low on-resistance of 0.09 Ω reduces conduction losses, improving overall device efficiency. It supports a maximum power dissipation of 1.29 W and operates reliably in a wide temperature range from -55°C up to 150°C, making it suitable for harsh environments.
The device exhibits a typical gate charge of 6.8 nC at Vgs, enabling fast switching with minimal delays. Forward voltage is rated around -0.75 V, supporting effective current flow control. DiodesZetex ensures the product meets critical standards including RoHS, as well as automotive-grade certifications AEC-Q200, AEC-Q101, and AEC-Q100 for enhanced reliability in automotive and industrial sectors.
Dual P-channel enhancement MOSFET designed for low on-state resistance. Maximum continuous drain current of 3.1 A for high load applications. Compact 6-pin UDFN-2020 package for surface-mount PCB designs. Low Rds(on) reduces conduction losses significantly.
Wide operating temperature range from -55°C to 150°C for industrial use. Typical gate charge of 6.8 nC ensures responsive switching. Compliant with RoHS and automotive quality standards AEC-Q200, AEC-Q101, AEC-Q100.
This MOSFET is ideal for industrial, automotive, power management, and electronic component manufacturing applications where durable and efficient switching is critical. Enhance your semiconductor designs with the reliable performance of the DiodesZetex DMP2045UFDB-7 dual P-channel MOSFET.
Explore more semiconductor products and MOSFET components within the Electronics & Electricals category at EnvMart for your technical and industrial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.1 A.
This MOSFET comes in a compact 6-pin UDFN-2020 surface mount package.
The maximum drain-source voltage for this MOSFET is 20 V.
It operates reliably in a temperature range from -55°C to 150°C.
The typical gate charge at Vgs is 6.8 nC, allowing for fast switching.
This model meets automotive standards AEC-Q200, AEC-Q101, and AEC-Q100.
The maximum power dissipation for this device is 1.29 W.
The maximum drain-source resistance (Rds) is 0.09 Ω, which helps reduce power loss.
The forward voltage is rated at approximately -0.75 V.
This device features a P-channel enhancement mode configuration.
This MOSFET has a pin count of 6.
The country of origin for this MOSFET is India.
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