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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | IPN70R600P7SATMA1 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | 700V CoolMOSª P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8.5A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Maximum Power Dissipation Pd | 6.9W |
| Typical Gate Charge Qg @ Vgs | 10.5nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 900mV |
Infineon IPN70R600P7SATMA1 is a 700V CoolMOSª P7 N-Channel MOSFET designed for high efficiency power switching in consumer electronics. It supports a maximum continuous drain current of 8.5 A and a drain source voltage of 700 V housed in a compact 3-pin SOT-223 surface mount package. This power MOSFET is ideal for applications such as chargers, adapters, lighting, and TVs where cost-sensitive solutions with high performance are required.
The MOSFET offers a maximum drain source resistance of 600 milliohms, enabling minimal power loss during conduction. It can handle gate voltages up to 16 V and features a forward voltage of 900 mV for efficient switching operations. The device dissipates up to 6.9 W of power supporting thermal stability in demanding environments.
Operating temperature ranges from -40°C to 150°C, making it reliable for a wide range of industrial, commercial, and consumer electronics applications. The unit’s dimensions (6.7 mm length, 3.7 mm width, and 1.8 mm height) allow for space-saving PCB designs. It is RoHS compliant and designed without automotive certification but suitable for general electrical and electronic use.
Designed for cost-sensitive consumer electronic applications including chargers and adapters. Supports up to 8.5 A continuous drain current at 700 V drain source voltage. Compact surface mount SOT-223 package with 3 pins for easy PCB integration.
Maximum drain source resistance of 600 milliohms reduces power loss. Allows gate source voltage up to 16 volts. 900 mV forward voltage for effective switching. Power dissipation capacity up to 6.9 watts enhances thermal management.
Wide operating temperature range from -40°C to 150°C. Lightweight component suitable for industrial, laboratory, and consumer electronic designs.
This Infineon CoolMOSª P7 MOSFET is suitable for various industrial and commercial power electronic circuits including power supplies, lighting systems, and electronic adapters. Its efficient conduction and power handling enable enhanced performance in critical electronics. EnvMart provides this high-quality MOSFET for professional and industrial clients requiring reliable semiconductor components.
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