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DiodesZetex Isolated Dual N-Channel and P-Channel MOSFET 9.6 A, 35 V, 8.9 W Power Dissipation, Surface Mount DMG4511SK4-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 2.39mm |
| Length | 6.7mm |
| Model | DMG4511SK4-13 |
| Width | 6.2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD-020, MIL-STD-202, UL 94V-0, RoHS, AEC-Q101 |
| Pin Count | 3 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 9.6A |
| Maximum Drain Source Voltage Vds | 35V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 8.9W |
| Typical Gate Charge Qg @ Vgs | 8.8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Isolated |
Key Features
- Isolated dual N/P-channel configuration for enhanced circuit versatility.
- Surface mount TO-252 package with 3 pins for compact PCB design.
- Maximum power dissipation of 8.9 W supports robust thermal performance.
- High maximum operating temperature of +150°C ensures reliability in demanding applications.
- Low maximum drain-source resistance of 65 mΩ improves efficiency.
- Typical gate charge of 8.8 nC at Vgs allowing fast switching.
- Wide operating temperature range from -55°C to +150°C.
- Complies with standards J-STD-020, MIL-STD-202, UL 94V-0, RoHS, and AEC-Q101 for automotive and industrial use.
Product Description
DiodesZetex DMG4511SK4-13 is a high-performance isolated dual type N and type P-channel MOSFET designed for surface mount applications. This MOSFET supports a maximum continuous drain current of 9.6 A and a maximum drain-source voltage of 35 V, making it suitable for efficient power switching and amplification tasks.
Encased in a TO-252 package with 3 pins, it is compact and optimized for printed circuit boards requiring surface mounting. The enhancement mode channel supports reliable transistor operation across industrial temperature ranges of -55°C to +150°C, adaptable for automotive and industrial system requirements.
This MOSFET features a low maximum drain-source resistance (Rds) of 65 mΩ, ensuring low conduction losses and efficient power management. Its maximum power dissipation rating of 8.9 W enables it to handle significant power loads with adequate thermal stability.
Typical gate charge of 8.8 nC at specified gate voltage allows for quick switching, optimizing performance in high-speed circuits. The device also supports gate-source voltage tolerance from -20 V to +20 V.
The product conforms to several safety and quality standards including J-STD-020, MIL-STD-202, UL 94V-0, RoHS compliance, and automotive-grade certification AEC-Q101, affirming its reliability in demanding industrial and automotive environments.
Isolated dual N/P-channel MOSFET, ideal for mixed applications. Surface mount TO-252 package with 3 pins. Maximum continuous drain current of 9.6 A. Drain-source voltage maximum of 35 V and maximum power dissipation of 8.9 W.
Wide operating temperature range from -55°C to +150°C. Low Rds(on) of 65 mΩ for energy-efficient operation. Typical gate charge of 8.8 nC optimizes switching speed. Conforms to automotive standard AEC-Q101.
Typical applications include industrial power control, automotive electronics, and high-efficiency switching circuits. By choosing the DiodesZetex DMG4511SK4-13, engineers benefit from compact package design combined with robust electrical performance, ideal for optimizing power management and switching efficiency.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.6 A.
The maximum drain-source voltage is 35 V.
It has a maximum power dissipation rating of 8.9 W.
The DMG4511SK4-13 comes in a TO-252 package type.
The typical gate charge at Vgs is 8.8 nC.
The maximum operating temperature is +150°C.
The minimum operating temperature is -55°C.
This MOSFET complies with J-STD-020, MIL-STD-202, UL 94V-0, RoHS, and AEC-Q101 standards.
The maximum drain-source resistance is 65 mΩ.
The TO-252 package has 3 pins.
It supports both N-channel and P-channel configurations.
This model is suitable for industrial power control, automotive electronics, and high-efficiency switching circuits.
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