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Infineon CoolMOS N-Channel MOSFET, 24 A, 650 V Enhancement Mode, 3-Pin TO-263 Package IPB65R095C7ATMA2
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.31mm |
| Model | IPB65R095C7ATMA2 |
| Width | 9.45mm |
| Mount Type | Surface |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 24A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 129W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Supports maximum continuous drain current of 24 amperes.
- Maximum drain-source voltage rating of 650 volts for high voltage operation.
- Low on-resistance of 95 milliohms minimizes conduction losses.
- Package type is TO-263 with a 3-pin surface mount design.
- Enhancement mode channel type ensuring reliable switch operation.
- Maximum power dissipation up to 129 watts for advanced thermal performance.
- Typical gate charge of 51 nanocoulombs enables fast switching.
- Operating temperature range from -55°C to 150°C suited for industrial environments.
Product Description
Infineon IPB65R095C7ATMA2 is a CoolMOS N-Channel MOSFET designed for high voltage and high efficiency power switching applications. This 3-pin device in a TO-263 surface mount package is capable of handling continuous drain currents up to 24 amperes and drain-source voltages as high as 650 volts. Its super junction CoolMOS technology provides reduced gate charge and low on-resistance, improving overall switching efficiency and thermal performance.
The MOSFET features an enhancement mode channel, making it suitable for switching power supplies, industrial power control, and energy management systems. It has a maximum power dissipation rating of 129 watts and can operate reliably over a temperature range from -55°C to 150°C.
This product’s robust design includes a maximum gate-source voltage of 20 volts and a typical gate charge of only 51 nanocoulombs, enabling fast switching while ensuring rugged dv/dt resilience. The smaller footprint TO-263 package enhances ease of assembly for surface mount PCB layouts.
Physical dimensions of the device are approximately 10.31 mm in length, 9.45 mm in width, and 4.57 mm in height, making it compact yet powerful for demanding discrete semiconductor applications.
Maximum continuous drain current of 24 A supports high power loads. 650 V maximum drain-source voltage ratings meet high voltage requirements. Low Rds(on) of 95 mΩ reduces power loss in conduction mode. Surface mount TO-263 package facilitates efficient heat dissipation and mounting.
Designed with enhancement mode channel for stable switching behavior. Maximum power dissipation capacity up to 129 W ensures good thermal management. Typical gate charge of 51 nC accelerates switching speeds. Wide operating temperature range (-55°C to 150°C) for industrial applications.
Maximum gate-source voltage rating of 20 V provides reliable gate drive control. Complies with industrial grade standards for reliability and Pb-free plating.
This Infineon CoolMOS IPB65R095C7ATMA2 MOSFET is ideal for applications in power electronics, industrial automation, and energy-efficient DC/DC converters. It offers a reliable, high performance solution for semiconductor switching tasks across industrial, commercial, and HVAC sectors.
Explore more MOSFETs and power electronics products in the Electronics & Electricals category at EnvMart to find compatible devices and solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 24 amperes.
It has a maximum drain-source voltage rating of 650 volts, suitable for high voltage applications.
The on-resistance (Rds(on)) of this unit is 95 milliohms, which helps minimize conduction losses.
The maximum power dissipation capacity is up to 129 watts, allowing for advanced thermal performance.
The typical gate charge is 51 nanocoulombs, facilitating fast switching capabilities.
The dimensions of the TO-263 package are approximately 10.31 mm in length, 9.45 mm in width, and 4.57 mm in height.
It operates reliably within a temperature range of -55°C to 150°C, making it suitable for industrial environments.
The maximum gate-source voltage rating is 20 volts, ensuring reliable gate drive control.
This model features an enhancement mode channel type, which ensures stable switching behavior.
This MOSFET uses a surface mount design, specifically in a TO-263 package.
It is commonly used in power electronics, industrial automation, and energy-efficient DC/DC converters.
The country of origin for this MOSFET is India.
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