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Infineon HEXFET N-Channel MOSFET 19 A 200 V Enhancement Mode 7-Pin DirectFET IRF6785MTRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IRF6785MTRPBF |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | DirectFET |
| Minimum Operating Temperature | -55°C |
| Pin Count | 7 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 57W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Optimized for Class-D audio amplifier applications with low on-resistance and improved efficiency.
- Utilizes advanced DirectFET packaging technology for lower parasitic inductance and resistance.
- Features enhancement mode channel with a maximum gate source voltage of 20 V.
- Operates over a wide temperature range from -55°C to 175°C.
- Rated with maximum power dissipation of 57 W and typical gate charge of 36 nC.
- Offers a maximum drain source resistance of 100 mΩ and forward voltage of 1.3 V.
- Lead-free and qualified for up to 260°C reflow soldering processes.
Product Description
The Infineon IRF6785MTRPBF HEXFET N-Channel MOSFET is a high-performance power semiconductor device suitable for industrial, electronic, and audio amplifier use cases. This MOSFET handles a continuous drain current of 19 A and a drain source voltage up to 200 V, packaged in a 7-pin DirectFET MZ format optimized for surface mounting.
Its enhancement mode channel type and low on-resistance per silicon area contribute to efficient power management and reduced losses. The advanced DirectFET packaging technology reduces parasitic inductance and resistance compared to conventional wire bonded packages, resulting in enhanced thermal performance and higher switching speeds.
Designed specifically for Class-D audio amplifier applications, this MOSFET balances high efficiency with low total harmonic distortion (THD) and minimal electromagnetic interference (EMI). Key parameters such as gate charge, body-diode reverse recovery, and internal gate resistance are optimized to meet these demanding requirements.
The device operates reliably across a broad temperature range of -55°C to 175°C and supports lead-free manufacturing processes qualified up to 260°C reflow, making it suitable for modern assembly lines.
Ideal applications include industrial electronics, power management in audio equipment, and other commercial electronic devices requiring efficient high-current switching components.
Optimized for Class-D audio amplifier efficiency and performance. Advanced DirectFET packaging minimizes parasitic elements. Enhancement mode channel with robust voltage and current ratings. Wide operating temperature range ensures reliability under harsh conditions.
Lead-free and high-temperature reflow process compatible. Discover more high-quality MOSFETs and semiconductor components in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 19 A.
It can handle a maximum drain source voltage of 200 V.
The device operates over a wide temperature range from -55°C to 175°C.
The typical gate charge is 36 nC at the specified gate-source voltage.
The maximum power dissipation rating is 57 W.
It uses a 7-pin DirectFET package type optimized for surface mounting.
The maximum gate source voltage is 20 V.
The forward voltage rating is 1.3 V.
The maximum drain source resistance is 100 mΩ.
It is optimized for Class-D audio amplifier applications, focusing on efficiency and low total harmonic distortion.
This model features an enhancement mode N-channel type.
The country of origin for this model is India.
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