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Infineon HEXFET N-Channel MOSFET 55 V, 59 A, 110 W Power Dissipation, 3-Pin TO-252 IRFR2905ZTRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRFR2905ZTRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 59A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 14.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 29nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Features ultra low on-resistance enhancing efficiency and performance.
- Supports a maximum power dissipation of 110 W for handling high power applications.
- Operates reliably within a temperature range of -55°C to 175°C.
- Designed for surface mount applications with fast switching capabilities.
- Includes a 29 nC typical gate charge at Vgs for efficient gate drive.
- Designed with enhancement channel mode for improved conduction.
- Built with a maximum gate-source voltage of 20 V ensuring robustness.
- Compact dimensions of 6.73mm length, 6.22mm width, and 2.39mm height.
Product Description
Infineon IRFR2905ZTRPBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor designed for power electronic applications. This device features a robust 3-pin TO-252 surface mount package ideal for compact circuit designs.
It supports a maximum continuous drain current of 59 A and a maximum drain-source voltage of 55 V, allowing it to handle demanding load conditions with enhanced efficiency due to ultra low on-resistance characteristics.
The MOSFET operates reliably over a wide temperature range from -55°C to 175°C, making it suitable for industrial and automotive environments requiring high temperature endurance.
The device's typical gate charge of 29 nC at Vgs ensures fast switching speeds with reduced gate drive power, supporting efficient circuit operation in applications like power supplies, motor control, and DC-DC converters.
Dimensions are compact with a length of 6.73 mm, width of 6.22 mm, and height of 2.39 mm, facilitating integration within dense PCB layouts. Ultra low on-resistance per silicon area for high efficiency. 175°C junction maximum operating temperature enhances reliability.
Fast switching speed suitable for high-frequency applications. Repetitive avalanche rated for robust performance during load transients. Surface mount package TO-252 for easy PCB assembly.
This HEXFET N-Channel MOSFET from Infineon is ideally suited for industrial, automotive, telecommunications, and power management applications requiring reliable high current switching and fast response times.
Explore the full range of Infineon power semiconductors and other discrete components in the EnvMart catalog to find the perfect fit for your electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 59 A.
It can handle a maximum drain-source voltage of 55 V.
The maximum power dissipation rating is 110 W.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
The typical gate charge at Vgs is 29 nC.
This MOSFET operates reliably within a temperature range of -55°C to 175°C.
It is designed for surface mount applications.
The maximum gate-source voltage is 20 V.
The channel mode is enhancement, which improves conduction.
The maximum drain-source resistance is 14.5 mΩ.
It is suitable for industrial, automotive, telecommunications, and power management applications requiring high current switching.
The pin count for this model is 3.
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