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Infineon N-Channel MOSFET 4A 700V Enhancement Mode 3-Pin SOT-223 IPN70R1K4P7SATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | IPN70R1K4P7SATMA1 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | IPN |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 1.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6.2W |
| Typical Gate Charge Qg @ Vgs | 4.7nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 900mV |
Key Features
- This MOSFET features a 1.4Ω maximum drain-source resistance to reduce conduction losses under load.
- It supports a maximum power dissipation of 6.2W, allowing for sustained thermal load handling.
- The device operates across a wide temperature range from -40°C to 150°C for reliability in industrial environments.
- A typical gate charge of 4.7nC minimizes switching energy and improves efficiency.
- The package type is SOT-223 with 3 pins, suitable for surface-mount assembly.
- It has a gate-source voltage tolerance up to 30V, providing robust gate-drive margin.
- The MOSFET exhibits a forward voltage of 900mV when the intrinsic diode conducts.
Product Description
Infineon IPN70R1K4P7SATMA1 is a high-voltage N-channel MOSFET designed for industrial and electronic applications requiring efficient power switching. With a maximum continuous drain current of 4A and a high drain-source voltage rating of 700V, this enhancement-mode transistor is optimized for surface-mount technology using the SOT-223 3-pin package.
Designed for industrial thermal environments, this MOSFET offers a maximum power dissipation of 6.2W and operates reliably between -40°C and 150°C, making it suitable for demanding temperature ranges. Its low maximum drain-source resistance of 1.4Ω reduces conduction losses, improving overall circuit efficiency.
The device features a typical gate charge of 4.7nC at the gate-source voltage, minimizing gate-drive energy and switching losses. It supports a gate-source voltage of up to 30V, ensuring robust gate-drive margin and operational stability.
Applications include high-voltage switch circuits in power supplies, mid-power motor drive stages using surface mounting, flyback and boost converter switching elements, and controlled load switching in industrial equipment. The device's forward voltage of 900mV when conducting provides predictable conduction characteristics.
This MOSFET's compact dimensions (6.7mm length, 3.7mm width, 1.8mm height) in the SOT-223 package facilitate efficient PCB layout and thermal dissipation. It is ideal for electronic circuit designs in manufacturing, automation, HVAC, and power management.
This MOSFET provides high-voltage switching capability up to 700V. Support for continuous drain current of up to 4A enables moderate load control. Enhancement-mode N-channel transistor ensures reliable switching performance.
Low Rds(on) reduces power losses in switching applications. Wide operation temperature range assures durability in harsh environments. Compact 3-pin SOT-223 package supports surface mounting techniques. Minimal gate charge reduces energy consumption during switching.
Discover more high-quality semiconductor components and MOSFET devices by exploring the Electronics & Electricals category at EnvMart, optimized for professional industrial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4A.
This MOSFET has a maximum drain-source voltage rating of 700V.
It comes in a SOT-223 package type with 3 pins, suitable for surface-mount assembly.
The maximum power dissipation of this MOSFET is 6.2W.
The typical gate charge at the gate-source voltage is 4.7nC.
It operates reliably between -40°C and 150°C, making it suitable for industrial environments.
The maximum gate-source voltage tolerance for this model is up to 30V.
The dimensions of this model are 6.7mm in length, 3.7mm in width, and 1.8mm in height.
The maximum drain-source resistance is 1.4Ω, which helps reduce conduction losses.
It is suitable for high-voltage switch circuits in power supplies, mid-power motor drive stages, and controlled load switching in industrial equipment.
The forward voltage when the intrinsic diode conducts is 900mV.
This model uses an enhancement-mode N-channel configuration.
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