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Vishay N-Channel MOSFET, 9.8 A, 200 V Enhancement Mode, 3-Pin TO-220 IRFI640GPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.8mm |
| Length | 10.63mm |
| Model | IRFI640GPBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | IRFI |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.8A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2V |
| N-channel MOSFET,IRFI640G 9.5A 200VBrand | Vishay |
Key Features
- Enhancement mode operation for efficient switching applications.
- Maximum power dissipation rated at 40 W.
- Typical gate charge of 70 nC ensures fast switching performance.
- Operating temperature range from -55°C to 150°C for industrial robustness.
- Low maximum drain-source resistance of 180 mΩ reduces conduction losses.
- TO-220 through-hole mount for easy PCB installation.
- Maximum gate-source voltage rating of ±20 V for reliable gate control.
- Forward voltage of 2 V suitable for power electronics applications.
Product Description
Vishay IRFI640GPBF is an N-Channel enhancement mode MOSFET designed for efficient power switching and amplification in various electronic equipment. It supports a maximum continuous drain current of 9.8 A and can handle drain-source voltages up to 200 V. Packaged in a robust TO-220 3-pin format, this device facilitates effective heat dissipation and reliable through-hole PCB mounting.
This MOSFET operates efficiently with a low typical gate charge of 70 nC and a maximum drain-source resistance of 180 mΩ, ensuring minimal conduction losses. Its broad operating temperature range from -55°C to 150°C allows deployment in demanding industrial, automotive, and power management systems.
The IRFI640GPBF's maximum power dissipation is rated at 40 W, supporting medium power applications. A maximum gate-source voltage of ±20 V provides safe gate driving margins. The 2 V forward voltage characteristic adds to its suitability for switching circuits and power control.
Typical applications include industrial control systems, power supplies, automotive electronics, and general semiconductor projects requiring reliable and efficient N-Channel MOSFETs. This component ensures durability and optimized performance in environments subject to harsh electrical and thermal conditions.
Enhancement mode MOSFET for efficient switching. 9.8 A continuous drain current supports moderate power loads. 200 V maximum drain-source voltage for versatile applications. Low drain-source resistance minimizes power loss.
Wide temperature range from -55°C to 150°C ensures operational stability. TO-220 3-pin package for easy mounting and heat management. Typical gate charge of 70 nC enables fast switching. Maximum power dissipation of 40 W suits various power electronics.
Explore more Vishay semiconductor components and MOSFETs in the Electronics & Electricals category at EnvMart for industrial and electronic development projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.8 A.
This MOSFET can handle a maximum drain-source voltage of 200 V.
The typical gate charge is 70 nC, which supports fast switching performance.
The maximum power dissipation for this model is rated at 40 W.
It operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage rating is ±20 V.
The maximum drain-source resistance is 180 mΩ, which helps reduce conduction losses.
This model features a TO-220 package type designed for through-hole mounting.
The dimensions of this MOSFET are 10.63 mm in length, 4.83 mm in width, and 9.8 mm in height.
It is suitable for applications in industrial control systems, power supplies, automotive electronics, and general semiconductor projects.
The forward voltage characteristic is 2 V, which is suitable for power electronics applications.
This model has a pin count of 3.
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