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Vishay N-Channel MOSFET, 22 A, 500 V Enhancement Mode, 3-Pin TO-247 IRFP22N50APBF

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 20.7mm
Length 15.87mm
Model IRFP22N50APBF
Width 5.31mm
Mount Type Through Hole
Series IRFP
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 22A
Maximum Drain Source Voltage Vds 500V
Maximum Drain Source Resistance Rds 230mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 277W
Typical Gate Charge Qg @ Vgs 120nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.5V
IRFP22N50A, N-Channel MOSFET Transistor 22A 500V, 3-Pin TO-247ACBrand Vishay

Key Features

  • Provides high maximum continuous drain current of 22 amperes.
  • Built to operate at a drain source voltage of 500 volts.
  • Features a low maximum drain source resistance of 230 milliohms for efficient conduction.
  • Operates in enhancement mode with a gate source voltage rating of up to 30 volts.
  • Typical gate charge is 120 nanocoulombs at Vgs, enabling efficient switching.
  • Maximum power dissipation is rated at 277 watts for high power applications.
  • Operates reliably within a temperature range of -55°C to 150°C.
  • Compact TO-247 package with dimensions of 20.7 mm height, 15.87 mm length, and 5.31 mm width.

Product Description

The Vishay IRFP22N50APBF is a high-performance N-Channel MOSFET designed for industrial and commercial electronic applications requiring robust power handling and efficient switching.

This device features a maximum continuous drain current of 22 amperes and a high drain source voltage of 500 volts, making it suitable for medium to high power circuits. Housed in a durable TO-247 package with three pins, it supports through hole mounting for ease of integration onto circuit boards.

Operating in enhancement mode, the IRFP22N50APBF has a maximum drain source resistance of 230 milliohms, which helps reduce conduction losses and improve overall efficiency. The typical gate charge of 120 nanocoulombs allows fast switching performance, beneficial for power regulation and motor control applications.

This MOSFET is rated for operation over a wide temperature range from -55°C to 150°C, ensuring reliable performance in challenging environmental conditions. Its power dissipation is rated at 277 watts, accommodating substantial power loads.

Key physical dimensions include a height of 20.7 mm, length of 15.87 mm, and width of 5.31 mm, packaged in the industry-standard TO-247 format. The device's gate source voltage limit of 30 volts and a forward voltage drop of 1.5 volts underpin its suitability for a variety of switching and amplification tasks.

This MOSFET is ideal for use in industrial motor drives, power supplies, converters, inverters, and many other power electronics applications requiring reliable and efficient switching components.

Provides high maximum continuous drain current of 22 amperes. Built to operate at a drain source voltage of 500 volts. Features a low maximum drain source resistance of 230 milliohms for efficient conduction. Operates in enhancement mode with a gate source voltage rating of up to 30 volts.

Typical gate charge is 120 nanocoulombs at Vgs, enabling efficient switching. Maximum power dissipation is rated at 277 watts for high power applications. Operates reliably within a temperature range of -55°C to 150°C. Compact TO-247 package with dimensions of 20.7 mm height, 15.87 mm length, and 5.31 mm width.

Designed for through hole mounting, simplifying installation. Forward voltage drop is 1.5 volts ensuring low conduction losses. Explore the range of Vishay semiconductor products on EnvMart for your industrial and commercial electronics needs.

Vishay N-Channel MOSFET, 22 A, 500 V Enhancement Mode, 3-Pin TO-247 IRFP22N50APBF
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Frequently Asked Questions

The maximum continuous drain current is 22 amperes.

It operates at a maximum drain source voltage of 500 volts.

This model is packaged in a TO-247 format with dimensions of 20.7 mm height, 15.87 mm length, and 5.31 mm width.

The maximum power dissipation is rated at 277 watts.

The typical gate charge is 120 nanocoulombs at Vgs.

It operates reliably within a temperature range of -55°C to 150°C.

The maximum gate source voltage rating is up to 30 volts.

It supports through hole mounting for ease of integration onto circuit boards.

The maximum drain source resistance is 230 milliohms.

This MOSFET is suitable for industrial motor drives, power supplies, converters, inverters, and other power electronics applications.

The forward voltage drop is 1.5 volts, ensuring low conduction losses.

It features an N-channel type, operating in enhancement mode.

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