Vishay E N-Channel Power MOSFET 8A 800V Enhancement Mode 3-Pin TO-252 SIHD11N80AE-GE3

Vishay SIHD11N80AE-GE3 is an E-type N-Channel Power MOSFET specifically engineered for surface-mount power conversion and switching applications requiring high voltage and moderate current capacity. This device supports a maximum continuous drain current of 8 amperes with a drain-source voltage rating of 800 volts, making it suitable for a broad range of industrial and commercial applications.

Encased in a TO-252 package, the MOSFET facilitates excellent thermal coupling to the PCB copper plane, enabling effective heat dissipation with a maximum power dissipation of 78 watts. Designed with an enhancement mode channel, the device features a low on-resistance of 391 milliohms at rated current, reducing conduction losses and improving efficiency in power circuits.

This MOSFET operates reliably across a wide temperature range from -55°C to 150°C, making it appropriate for harsh environments. The device exhibits a typical gate charge of 28 nanocoulombs, which ensures predictable switching energy, and a maximum gate-source voltage rating of 30 volts to protect gate drivers from voltage excursions.

The forward voltage of 1.2 volts is a critical factor when estimating conduction and switching losses, particularly in diode-conducting intervals and synchronous rectification contexts. This makes the MOSFET an excellent choice for high-voltage switch-mode power supplies, half-bridge and boost converter stages, industrial motor drives, offline chargers, lighting controls, telecoms, and power distribution modules.

Its compliance with RoHS regulations underscores Vishay's commitment to environmentally responsible semiconductor manufacturing. The device's compact dimensions of 9.4mm length, 6.4mm width, and 2.2mm height ensure compatibility with modern compact circuit designs.

Supports continuous drain current up to 8 amperes. Enables high-voltage operation up to 800 volts. Features low drain-source resistance of 391 milliohms for efficient conduction. Capable of dissipating maximum power of 78 watts.

Designed with a 3-pin TO-252 surface-mount package for effective thermal management. Operates reliably between -55°C and 150°C temperature range. Typical gate charge of 28 nanocoulombs ensures predictable switching performance.

Maximum gate-source voltage limited to 30 volts for gate driver protection. Forward voltage of 1.2 volts influences power loss calculations. Complies with RoHS environmental standards.

This product is ideal for industrial applications including power supplies, motor drives, lighting controls, and telecom modules. Explore more Vishay Power MOSFETs and related components in the Electronics & Electricals category at EnvMart.