Vishay E N-Channel Power MOSFET, 4.4 A, 800 V Enhancement Mode, Through Hole IPAK Package SIHU5N80AE-GE3

Vishay SIHU5N80AE-GE3 is a high-performance E series N-Channel Power MOSFET designed for industrial and commercial power-switching applications. This device supports a maximum continuous drain current of 4.4 A and withstands a maximum drain-source voltage of 800 V, making it suitable for high-voltage power conversion duties.

Packaged in an IPAK through-hole form factor, it facilitates effective thermal dissipation and simple PCB assembly. The device features an enhancement mode channel and low drain-source resistance (Rds(on)) of 1.35 ohms, which significantly reduces conduction losses during operation. This attribute optimizes efficiency in industrial motor controls, switch mode power supplies (SMPS), and boost converters used in power factor correction circuits.

This MOSFET also has a maximum power dissipation rating of 62.5 W and can operate reliably between -55°C and 150°C, enabling dependable use in environments with wide thermal variation such as industrial automation and energy management systems. The gate drive voltage margin is well protected by a 30 V maximum gate-source rating, and the typical gate charge of 16.5 nC enables low trigger power requirements.

The component complies with RoHS standards, supporting deployment in restricted substance environments. It is widely used in primary switch duties in SMPS circuits, industrial motor-drive inverter front-ends, and as a replacement for high-voltage relays in energy management and protection schemes.

IPAK package with through-hole mounting for enhanced thermal management. Supports continuous drain current of 4.4 A for sustained load conduction. Drain-source voltage rating up to 800 V for high-voltage switching. Low on-resistance of 1.35 Ω reduces losses and improves efficiency.

Maximum power dissipation rated at 62.5 W for robust thermal capability. Wide operating temperature range from -55°C to 150°C suitable for harsh environments. RoHS compliant for environmental safety. Typical gate charge of 16.5 nC allows efficient driving circuitry design.

Maximum gate-source voltage 30 V ensures safe operation margin.

Select Vishay power MOSFETs for demanding industrial, commercial, and control power switching applications. Browse Vishay products and Power MOSFETs at EnvMart for reliable semiconductor solutions.