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DiodesZetex N-Channel MOSFET, 17 A, 100 V Enhancement Mode, 3-Pin TO-252 Package DMN10H099SK3-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 2.39mm |
| Length | 6.2mm |
| Model | DMN10H099SK3-13 |
| Width | 6.7mm |
| Mount Type | Surface |
| Series | DMN10H099SK3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 99mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 34W |
| Typical Gate Charge Qg @ Vgs | 25.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.77V |
Key Features
- The device operates in enhancement mode for efficient switching.
- Maximum power dissipation is 34 W ensuring reliability under high load.
- It features a maximum drain-source resistance of 99 milliohms for optimal conduction.
- Designed for surface mount applications with 3-pin configuration.
- Typical gate charge at Vgs is 25.2 nC for fast switching performance.
- Gate-source voltage supports a maximum of -20 V to +20 V ensuring device protection.
- Operating temperature ranges from -55 °C to +150 °C for versatile environments.
- Physical dimensions are length 6.2 mm, width 6.7 mm, and height 2.39 mm.
Product Description
DiodesZetex DMN10H099SK3-13 is a high-performance N-Channel MOSFET designed for switching and amplification in electronic circuits. Featuring a 17 A continuous drain current rating and 100 V maximum drain-source voltage, this device is ideal for power management applications requiring efficient and robust semiconductor components.
Housed in a TO-252 surface mount package with 3 pins, the MOSFET supports enhancement mode operation delivering low conduction losses with a maximum Rds(on) of 99 milliohms. It dissipates up to 34 W power while maintaining stable operation within a wide temperature range from -55 °C to 150 °C, making it suitable for harsh industrial and automotive environments.
The MOSFET offers a typical gate charge of 25.2 nanocoulombs at Vgs which enables fast switching speeds optimized for energy-efficient designs. Its gate-source voltage limits (-20 V to +20 V) provide essential protection and enhance device reliability. Dimensions of 6.2 mm (length), 6.7 mm (width), and 2.39 mm (height) facilitate compact circuitry layouts.
This component complies with the automotive industry standard AEC-Q101, ensuring high quality and suitability for automotive-grade electronics, HVAC control systems, manufacturing equipment, and general power electronics applications.
The device operates in enhancement mode for efficient switching. Maximum power dissipation is 34 W ensuring reliability under high load. It features a maximum drain-source resistance of 99 milliohms for optimal conduction.
Designed for surface mount applications with 3-pin configuration. Typical gate charge at Vgs is 25.2 nC for fast switching performance. Gate-source voltage supports a maximum of -20 V to +20 V ensuring device protection.
Operating temperature ranges from -55 °C to +150 °C for versatile environments. Physical dimensions are length 6.2 mm, width 6.7 mm, and height 2.39 mm. Meets automotive standard AEC-Q101, suitable for automotive and industrial use.
This MOSFET is widely used in industrial electronics, automotive power control, embedded systems, and other semiconductor applications requiring robust and reliable switching devices. Explore more semiconductor products and MOSFET variants on EnvMart’s comprehensive electronic components platform.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 A.
This MOSFET has a maximum drain-source voltage of 100 V.
The typical gate charge at Vgs is 25.2 nC, allowing for fast switching performance.
The physical dimensions are 6.2 mm in length, 6.7 mm in width, and 2.39 mm in height.
The maximum power dissipation is 34 W, ensuring reliability under high load conditions.
It features a maximum drain-source resistance of 99 milliohms for optimal conduction.
The operating temperature range is from -55 °C to +150 °C, suitable for various environments.
This device complies with the automotive industry standard AEC-Q101.
The gate-source voltage supports a maximum of -20 V to +20 V, providing essential protection.
It is designed for surface mount applications with a 3-pin configuration.
This MOSFET is suitable for industrial electronics, automotive power control, and general power electronics applications.
This model features an N-channel configuration, operating in enhancement mode.
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