DiodesZetex N-Channel MOSFET 500 mA 12 V Enhancement 3-Pin Surface Mount X2-DFN DMN1260UFA-7B

DiodesZetex DMN1260UFA-7B is an N-Channel MOSFET transistor designed for electronic and power switching applications requiring up to 500 mA continuous current and 12 V drain-source voltage.

It features an enhancement mode channel type in a 3-pin X2-DFN surface mount package, optimized for compact PCB mounting in industrial, automotive, and electronic equipment. This MOSFET supports a maximum power dissipation of 360 mW and operates reliably across a wide temperature range from -55°C up to 150°C, ensuring durability in harsh environments.

Its electrical characteristics include a maximum drain-source resistance of 1.5 Ω, a typical gate charge of 0.96 nC at gate voltage, and forward voltage of 1.2 V, facilitating efficient and fast switching circuits.

Certified to the automotive industry standard AEC-Q101, this MOSFET is suitable for automotive electronics as well as other demanding semiconductor roles. With its well-defined compact dimensions of 0.85 mm width, 0.65 mm length, and 0.35 mm height, the DMN1260UFA-7B integrates seamlessly into high-density circuit designs.

This MOSFET features an enhancement mode N-channel for versatile switching. The compact 3-pin X2-DFN surface mount package offers design flexibility. Supports a continuous drain current of 500 mA at 12 V drain-source voltage.

Operates over a temperature range from -55°C to 150°C. Maximum power dissipation of 360 mW suits moderate power circuits. Automotive standard AEC-Q101 certification ensures reliability. Low gate charge enables fast and efficient switching performance.

Compact dimensions aid integration in space-constrained applications.

This transistor is ideal for industrial, automotive, electronic manufacturing, and power management applications requiring reliable MOSFET performance. Explore more semiconductor and discrete component products at EnvMart.