DiodesZetex N-Channel MOSFET 630mA 20V Surface Mount SOT-23 3-Pin DMN2004K-7

DiodesZetex DMN2004K-7 is a high performance N-Channel MOSFET transistor designed for low voltage, low power switching applications. This device operates at a maximum drain-source voltage of 20 V and supports continuous drain currents up to 630 mA. It is housed in a compact 3-pin SOT-23 surface mount package, making it suitable for use in modern compact electronic circuits where space efficiency is critical.

The MOSFET features a low maximum drain-source resistance of 900 milliohms which ensures minimal conduction losses and enhances energy efficiency. With a maximum power dissipation of 350 milliwatts, the device can sustain stable operation across a wide temperature range from -65°C to 150°C, thereby delivering reliable performance in industrial, consumer electronics, and automotive environments.

The typical gate charge of 0.9 nC reduces switching times and losses, making it especially suited for power-sensitive applications. Its gate-source voltage range (-8 to +8 V) provides robust switching characteristics. The small physical dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height facilitate integration into dense circuit boards.

This MOSFET is compliant with automotive quality standards including AEC-Q200, AEC-Q100, AEC-Q104, and AEC-Q101, underscoring its suitability for automotive and demanding industrial applications. Its surface mount design enables automated assembly techniques, improving manufacturing efficiency.

Applications span power regulation, signal switching, and amplification in consumer electronics, automotive electronics, industrial machinery, and telecommunications equipment. DiodesZetex DMN2004K-7 is a reliable semiconductor component for enhancing circuit efficiency and durability.

This MOSFET supports a maximum continuous drain current of 630 mA. The maximum drain-source voltage is 20 V, suitable for low voltage switching. The device has a low maximum drain-source resistance of 900 milliohms for efficient conduction.

Maximum power dissipation is rated at 350 milliwatts ensuring safe thermal operation. Operates reliably in a temperature range from -65 to 150 degrees Celsius. Features a typical gate charge of 0.9 nanoCoulombs minimizing switching losses.

Designed with automatic surface mount technology for compact circuit module assembly. Package dimensions are compact with length 3 mm, width 1.4 mm, and height 1.1 mm. Explore more DiodesZetex MOSFETs and other semiconductor products for industrial and commercial electronic applications on EnvMart.