Vishay EF N-Channel Power MOSFET 29 A 650 V Enhancement Mode 3-Pin TO-220AB SiHP105N60EF-GE3

The Vishay SiHP105N60EF-GE3 is a high-voltage N-channel power MOSFET designed for robust industrial and electronic applications requiring efficient power switching and control. Featuring a maximum continuous drain current of 29 A and a 650 V drain-source voltage rating, this device is suited for demanding power conversion tasks.

This enhancement-mode MOSFET comes in a TO-220AB through-hole package with three pins and a mounting tab, allowing straightforward integration into printed circuit boards and reliable thermal management with external heatsinks.

The MOSFET supports a maximum power dissipation of 208 W, which facilitates the handling of substantial power loads without compromising performance. Its low on-resistance of 88 milliohms minimizes conduction losses, improving efficiency in both DC and switching operations.

With a typical gate charge of 53 nC and a maximum gate-source voltage rating of 30 V, the device can be switched efficiently and driven safely within device limits. The forward voltage of 1.2 V provides useful parameters for conduction loss calculations and body diode performance assessments.

The operating temperature range from -55°C to 150°C allows the MOSFET to function reliably in diverse thermal environments, including cold starts and high-temperature operation, making it suitable for industrial motor drives, power factor correction circuits, and switched-mode power supplies (SMPS).

Applications include primary-side switching in SMPS, industrial motor-drive inverters, high-voltage DC-DC converters, electronic load and power-test equipment, and other power factor correction topologies requiring high voltage and current capabilities with robust thermal and electrical tolerances.

Supports continuous drain current up to 29 A. Maximum drain-source voltage of 650 V. Enhancement mode N-channel MOSFET. Through-hole TO-220AB package type with 3 pins. Maximum power dissipation rated at 208 W. Typical gate charge of 53 nC for efficient switching.

Operating temperature range from -55°C to 150°C. Low drain-source resistance of 88 mΩ. Maximum gate-source voltage of 30 V. Forward voltage of 1.2 V.

This product is RoHS compliant and suitable for various industrial, electronic, and power management applications. Explore more Vishay Power MOSFET offerings and similar power semiconductors on EnvMart.