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ROHM Power N-Channel MOSFET, 12 A, 600 V, Enhancement Mode, 3-Pin TO-220FM Package R6012JNXC7G

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ROHM Power N-Channel MOSFET, 12 A, 600 V, Enhancement Mode, 3-Pin TO-220FM Package R6012JNXC7G

Name: ROHM Power N-Channel MOSFET, 12 A, 600 V, Enhancement Mode, 3-Pin TO-220FM Package R6012JNXC7G
Brand: ROHM
SKU: 256490
Price: 2.57 USD
Availability: InStock

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Category Power MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	16.27mm
Length	10.3mm
Model	R6012JNXC7G
Width	5mm
Mount Type	Through Hole
Series	R6012JNX
Maximum Operating Temperature	150°C
Package Type	TO-220FM
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	12A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	390mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	60W
Typical Gate Charge Qg @ Vgs	28nC
Maximum Gate Source Voltage Vgs	30V

Key Features

This enhancement mode MOSFET offers a maximum continuous drain current of 12 amperes.
It supports a maximum drain-source voltage of 600 volts for reliable high-voltage operations.
Features low on-resistance with a typical maximum drain-source resistance of 390 milliohms.
Capable of dissipating up to 60 watts of power, making it suitable for power applications.
Designed with fast reverse recovery time for efficient switching performance.
Operates within a temperature range from -55°C to a maximum of 150°C.
Typical gate charge at Vgs is 28 nanocoulombs enabling low gate drive power.
Mount type is through hole with a 3-pin configuration in a TO-220FM form factor.

Product Description

ROHM R6012JNXC7G Power N-Channel MOSFET is engineered for high-efficiency switching applications with a maximum continuous drain current of 12 amperes and a robust drain-source voltage rating of 600 volts. This enhancement mode device comes in a compact 3-pin TO-220FM package that enables through-hole mounting. The MOSFET exhibits low on-resistance of 390 milliohms, ensuring minimal conduction losses and excellent power handling capabilities with a maximum power dissipation rating of 60 watts.

Designed to operate reliably within a wide temperature range from -55°C to 150°C, this component is well suited for various industrial, power management, and electronic equipment applications. The typical gate charge of 28 nanocoulombs offers rapid switching with reduced gate drive power. Fast reverse recovery time further enhances the switching speed and efficiency, enabling improved performance in power conversion circuits.

The robust construction adheres to environmental standards with Pb-free plating and is RoHS compliant, making it an environmentally friendly choice. Its dimensions of approximately 16.27 mm height, 10.3 mm length, and 5 mm width facilitate easy integration into power electronic modules. The device's TO-220FM package provides thermal efficiency and mechanical stability crucial for demanding power electronics environments.

Maximum continuous drain current: 12 A. Drain-source voltage rating: 600 V. Low on-resistance: 390 mΩ max. Maximum power dissipation: 60 W. Enhancement mode operation. Fast reverse recovery time for switching efficiency.

Operating temperature range: -55°C to 150°C. Typical gate charge: 28 nC at Vgs. Through-hole mount, 3-pin TO-220FM package. Pb-free and RoHS compliant.

This Power MOSFET finds applications in industrial power converters, motor drives, switching power supplies, and other industrial, manufacturing, and laboratory electronic systems requiring efficient high-voltage switching components.

For more advanced semiconductor and MOSFET components, explore our Electronics & Electricals category at EnvMart.