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onsemi PowerTrench N-Channel MOSFET 50 A 250 V Enhancement 3-Pin TO-220 FDP2710
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.51mm |
| Length | 10.67mm |
| Model | FDP2710 |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 42mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 260W |
| Typical Gate Charge Qg @ Vgs | 78nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- The device features an enhancement mode channel with low RDS(on) of 42 mΩ.
- Designed for through hole mounting with 3 pins for easy integration.
- Maximum power dissipation rated at 260 W ensuring robust thermal performance.
- Operates reliably between -55°C and 150°C ambient temperatures.
- Maximum gate-source voltage tolerance of ±30 V for safe switching.
- Typical gate charge of 78 nC allowing efficient switching performance.
- Forward voltage drop is approximately 1.2 V aiding in minimization of conduction losses.
- The compact physical size (10.67 mm length, 4.83 mm width, 16.51 mm height) allows space-efficient design.
Product Description
onsemi FDP2710 PowerTrench N-Channel MOSFET is a high-performance discrete semiconductor device intended for robust switching applications. With a maximum continuous drain current of 50 A and a drain-source voltage rating of 250 V, it is designed to handle demanding power requirements in electronic circuits.
The device employs an enhancement mode N-channel MOSFET structure with a low on-resistance (RDS(on)) of 42 mΩ, which minimizes power losses and improves efficiency. It is supplied in a TO-220 package, facilitating through hole mounting and heat dissipation. The 3-pin configuration ensures straightforward PCB design and wiring.
This MOSFET features a gate-source voltage range of -30 V to +30 V and a typical gate charge of 78 nC, supporting rapid switching and control in power management designs. Forward voltage drop at 1.2 V further assists in reducing conduction losses during operation.
The power dissipation capability of 260 W enables the device to sustain elevated loads and heavy-duty use in industrial, manufacturing, and power conversion applications. It is rated to operate effectively within temperature ranges from -55°C to 150°C, suitable for harsh and variable environments.
Physical dimensions of 10.67 mm length, 4.83 mm width, and 16.51 mm height allow integration into compact electronic assemblies. The product is free from automotive certifications but ideal for numerous electronic component and power supply systems.
Enhancement mode N-channel MOSFET designed for efficient power switching. Maximum continuous current rating of 50 A. Maximum drain-source voltage of 250 V. Low RDS(on) of 42 mΩ reduces conduction losses. TO-220 package suits through hole mounting with 3 pins.
Wide operating temperature range from -55°C to 150°C. Maximum power dissipation power of 260 W ensures durability. Typical gate charge of 78 nC for responsive switching. Compact dimensions to optimize board space.
This onsemi PowerTrench MOSFET FDP2710 is recommended for use in industrial power management, electronic systems, manufacturing equipment, and various construction and automation applications. Browse the Electronics & Electricals category on EnvMart for more semiconductor and MOSFET options from leading brands.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 A.
The maximum drain-source voltage rating is 250 V.
It features a low RDS(on) of 42 mΩ, which helps in minimizing power losses.
The physical dimensions are 10.67 mm in length, 4.83 mm in width, and 16.51 mm in height.
It is supplied in a TO-220 package, designed for through hole mounting.
The typical gate charge is 78 nC, allowing for efficient switching performance.
It operates reliably between -55°C and 150°C ambient temperatures.
The maximum power dissipation is rated at 260 W, ensuring robust thermal performance.
The maximum gate-source voltage tolerance is ±30 V for safe switching.
This model is recommended for use in industrial power management, electronic systems, manufacturing equipment, and various automation applications.
It has a 3-pin configuration, which facilitates easy integration into PCB designs.
The FDP2710 employs an enhancement mode N-channel structure.
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