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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.65mm |
| Length | 6.55mm |
| Model | DMN6040SE-13 |
| Width | 3.55mm |
| Mount Type | Surface |
| Series | DMN6040SE |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.1A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 55mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 22.4nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
DiodesZetex DMN6040SE-13 is an N-Channel Enhancement Mode MOSFET rated for a maximum continuous drain current of 7.1 A and a maximum drain-source voltage of 60 V. Housed in a 4-pin SOT-223 surface mount package with dimensions of 6.55 mm length, 3.55 mm width, and 1.65 mm height, this device offers low on-resistance (Rds(on)) of 55 milliohms, which reduces power losses and enhances efficiency in power management circuits.
Operating across a temperature range of -55°C to 150°C, the DMN6040SE-13 supports harsh automotive and industrial conditions, compliant with the AEC-Q101 automotive standard. Its maximum gate-source voltage of 20 V and typical gate charge of 22.4 nC allow for effective switching performance.
With a maximum power dissipation rating of 2 W and a forward voltage of 1.2 V, this MOSFET is optimized for compact, high-efficiency designs.
Key features include lead-free and halogen and antimony-free materials, making it an environmentally friendly device. It is ideal for motor control, transformer driver switches, DC-DC converters, power management functions, and uninterrupted power supply systems.
Low on-resistance of 55 milliohms supports efficient power flow. Compact 4-pin SOT-223 package reduces PCB space requirements. Wide temperature operating range from -55°C to 150°C ensures reliability. Lead-free and environmentally compliant construction.
Suitable for automotive standard AEC-Q101 requirements. Typical gate charge optimizes switching speed and power efficiency. Enhancement mode channel increases circuit design flexibility. Robust maximum power dissipation for thermal stability.
This MOSFET is a reliable choice for applications in industrial electronics, automotive systems, and power management solutions requiring durable high-performance semiconductor devices. Explore the extensive category of MOSFETs at EnvMart for complementary products and components.
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