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Vishay Single N-Channel Power MOSFET 6.8 A 600 V TO-247AC IRFPC40PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Length | 16.25mm |
| Model | IRFPC40PBF |
| Width | 15.87mm |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS 2002/95/EC |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.8A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 1.2Ω |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 60nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Transistor Configuration | Single |
Key Features
- TO-247AC package provides effective heat dissipation and easy mounting.
- Low 1.2 Ω drain-source resistance ensures efficient power conduction.
- Designed for fast switching and dynamic dV/dt rating.
- Operates reliably in temperatures ranging from -55°C to 150°C.
- Maximum gate-source voltage of 20 V for robust gate control.
- Optimized for lower switching and conduction losses enhancing efficiency.
- Ideal for battery chargers, inverters, and switching mode power supplies.
- Single transistor configuration simplifies circuit design.
Product Description
Vishay IRFPC40PBF Single N-Channel Power MOSFET is a high-performance transistor designed for robust power electronics applications. It features a drain-source voltage rating of 600 V and a continuous drain current of 6.8 A, housed in a TO-247AC package that supports efficient heat dissipation and mounting convenience.
This MOSFET is engineered to deliver excellent efficiency with a low maximum drain-source resistance of 1.2 Ω at a gate-source voltage of 10 V. It offers fast switching capabilities and dynamic dV/dt rating, making it suitable for demanding industrial and commercial electronics applications including battery chargers, inverters, and power supplies.
The device operates safely across a wide temperature range from -55°C up to 150°C, ensuring high reliability under various environmental conditions. The maximum gate-source voltage rating of 20 V allows for flexible drive voltages in circuit designs.
Additional key features include an isolated central mounting hole for secure installation and compliance with RoHS 2002/95/EC standards, supporting lead-free manufacturing processes. Designed as a single transistor, it simplifies circuit layouts and reduces component count.
The Vishay IRFPC40PBF is well-suited for industrial, power management, and switching applications where efficient power control and durability are critical. It is made in China and meets stringent quality and environmental standards.
TO-247AC package for heat and mechanical stability. Low Rds(on) at 1.2 Ω reduces power loss and heat generation. Dynamic dV/dt rated for high-speed switching performance. Wide operating temperature range ensures application versatility.
Lead-free and RoHS compliant for environmental safety. Isolated mounting hole for ease of hardware integration. Single configuration transistor simplifying circuit design. Optimized to minimize switching and conduction losses.
Ideal for battery chargers, inverters, SMPS, and power supplies. Manufactured in China with consistent quality assurance. Explore more Power MOSFET products from Vishay and other leading brands at EnvMart for industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.8 A.
The maximum drain-source voltage rating is 600 V.
It is housed in a TO-247AC package, which provides effective heat dissipation and easy mounting.
The maximum gate-source voltage is 20 V, allowing for flexible drive voltages in circuit designs.
The maximum drain-source resistance is 1.2 Ω at a gate-source voltage of 10 V, ensuring efficient power conduction.
It operates reliably in temperatures ranging from -55°C to 150°C.
This model is ideal for applications such as battery chargers, inverters, and switching mode power supplies.
The typical gate charge is 60 nC.
The maximum power dissipation is 150 W.
Yes, it complies with RoHS 2002/95/EC standards, supporting lead-free manufacturing processes.
It is designed as a single transistor configuration, simplifying circuit design.
This model is manufactured in China.
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