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Vishay Single N-Channel Power MOSFET 10 A Continuous Drain Current 400 V Drain Source Voltage 3-Pin TO-263 IRF740ALPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 9.65mm |
| Model | IRF740ALPBF |
| Width | 10.67mm |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 0.55Ω |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Transistor Configuration | Single |
Key Features
- The MOSFET provides a maximum power dissipation of 125 W for robust thermal management.
- It has a typical gate charge of 36 nC at Vgs, minimizing the drive energy required.
- The device features a maximum drain source resistance of 0.55 Ω, ensuring efficient conduction.
- Operating temperature range spans from -55°C to 150°C, suitable for demanding environments.
- Supplied in a 3-pin TO-263 package for surface-mount assembly and reliable mounting.
- Maximum gate source voltage is 30 V for compatibility with standard gate drivers.
- Conforms to IEC 61249-2-21 and RoHS 2002/95/EC standards, guaranteeing environmental compliance.
- Ideal for offline SMPS switching, power-factor-correction circuits, and motor control applications.
Product Description
Vishay IRF740ALPBF Single N-Channel Power MOSFET supports a continuous drain current of 10 A and a maximum drain source voltage of 400 V, housed in a TO-263 package with three terminals facilitating surface-mount PCB assembly. This device is engineered to meet industrial and electronic power conversion requirements, offering a maximum power dissipation of 125 W for significant thermal capability.
Its typical gate charge of 36 nC at Vgs allows efficient switching with reduced drive energy demand, and the device exhibits a low maximum drain source resistance of 0.55 Ω, limiting conduction losses. The operating temperature range of -55°C to 150°C enables application across a wide thermal spectrum in both ambient and junction temperatures.
The MOSFET complies with IEC 61249-2-21 and RoHS 2002/95/EC standards, making it environmentally friendly and suitable for use in regulated markets. The maximum gate source voltage rating of 30 V is compatible with common gate drivers used in industrial electronics.
Applications for the IRF740ALPBF include offline switched-mode power supply (SMPS) primary stage switching, power-factor-correction circuits, motor control front ends for low-speed drives, industrial lighting ballast switching, and high-voltage test and measurement equipment.
The MOSFET provides a maximum power dissipation of 125 W for robust thermal management. It has a typical gate charge of 36 nC at Vgs, minimizing the drive energy required. The device features a maximum drain source resistance of 0.55 Ω, ensuring efficient conduction.
Operating temperature range spans from -55°C to 150°C, suitable for demanding environments. Supplied in a 3-pin TO-263 package for surface-mount assembly and reliable mounting. Maximum gate source voltage is 30 V for compatibility with standard gate drivers.
Conforms to IEC 61249-2-21 and RoHS 2002/95/EC standards, guaranteeing environmental compliance. Ideal for offline SMPS switching, power-factor-correction circuits, and motor control applications.
This Vishay power MOSFET offers a dependable solution for industrial, commercial, and laboratory applications where high voltage switching and moderate current handling are critical. Its thermal and electrical properties make it suitable for use in power electronics, HVAC controls, and manufacturing equipment.
Explore more products in the Power MOSFET category at EnvMart for comprehensive power semiconductor solutions tailored to your industrial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10 A.
This MOSFET has a maximum drain source voltage rating of 400 V.
It can dissipate a maximum power of 125 W, which supports robust thermal management.
The typical gate charge is 36 nC at Vgs, which minimizes the drive energy required.
The maximum gate source voltage for this model is 30 V, making it compatible with standard gate drivers.
The operating temperature range spans from -55°C to 150°C, suitable for demanding environments.
The maximum drain source resistance is 0.55 Ω, ensuring efficient conduction.
It is supplied in a 3-pin TO-263 package, designed for surface-mount assembly.
It is ideal for offline SMPS switching, power-factor-correction circuits, and motor control applications.
The height is 4.83 mm and the width is 10.67 mm.
It conforms to IEC 61249-2-21 and RoHS 2002/95/EC standards, ensuring environmental compliance.
This model features a single N-channel configuration.
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