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Vishay N-Channel MOSFET 7.7 A, 100 V, Surface and Through Hole Mount, 3-Pin IRFU120PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Model | IRFU120PBF |
| Mount Type | Surface, Through Hole |
| Maximum Operating Temperature | 150°C |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Directive 2011/65/EU, RoHS, JEDEC JS709A |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.7A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.27Ω |
| Maximum Power Dissipation Pd | 42W |
| Typical Gate Charge Qg @ Vgs | 16nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Transistor Configuration | Single |
Key Features
- Operates with a maximum power dissipation of 42 W.
- Surface and through hole mountable for versatile PCB integration.
- Features low drain-source resistance of 0.27 ohms at 10 VGS for efficient conduction.
- Supports gate-source voltage up to 20 V and operates from -55°C to 150°C.
- Single transistor configuration suitable for power switching applications.
- Compliant with Directive 2011/65/EU, RoHS, JEDEC JS709A standards.
- Typical gate charge Qg at Vgs is 16 nC, ensuring fast switching performance.
- Manufactured in China with reliable industrial quality assurance.
Product Description
Vishay IRFU120PBF is a high-performance N-channel Power MOSFET designed for efficient power management in industrial and electronic devices. It supports a continuous drain current of 7.7 A and a maximum drain-source voltage of 100 V, providing robust handling of power under varied operating conditions. The device is available in a 3-pin package, suitable for both surface and through hole mounting, allowing flexible integration into printed circuit boards.
This MOSFET features an exceptionally low drain-source resistance (Rds) of 0.27 ohms at a gate-source voltage of 10 V, contributing to reduced power losses and improved thermal performance. Its maximum power dissipation rating is 42 W, enabling operation under demanding electrical loads.
The gate-source voltage rating of 20 V and operating temperature range of -55°C to 150°C make it suitable for use in harsh industrial environments. The device's typical gate charge of 16 nC at Vgs supports fast switching speeds, valuable in motor control, power inverters, and switching power supplies.
Compliant with Directive 2011/65/EU (RoHS) and JEDEC JS709A standards, the IRFU120PBF ensures environmentally conscious and reliable use in critical applications.
Applications include industrial power regulation, electronic switching, automotive electronics, and general purpose switching tasks in electronic circuits requiring efficient power handling.
Operates with a maximum power dissipation of 42 W. Surface and through hole mountable for versatile PCB integration. Features low drain-source resistance of 0.27 ohms at 10 VGS for efficient conduction. Supports gate-source voltage up to 20 V and operates from -55°C to 150°C.
Single transistor configuration suitable for power switching applications. Compliant with Directive 2011/65/EU, RoHS, JEDEC JS709A standards. Typical gate charge Qg at Vgs is 16 nC, ensuring fast switching performance. Manufactured in China with reliable industrial quality assurance.
Explore more power semiconductor components at EnvMart to find solutions tailored to your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 7.7 A.
It supports a maximum drain-source voltage of 100 V.
The maximum power dissipation rating is 42 W.
The typical gate charge Qg at Vgs is 16 nC.
The drain-source resistance is 0.27 ohms at a gate-source voltage of 10 VGS.
It operates within a temperature range of -55°C to 150°C.
This model can be mounted using surface or through hole methods.
The MOSFET has a pin count of 3.
It is compliant with Directive 2011/65/EU, RoHS, and JEDEC JS709A standards.
It features a single transistor configuration.
The maximum gate-source voltage is 20 V.
It is suitable for applications such as industrial power regulation, electronic switching, automotive electronics, and general purpose switching tasks.
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