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Vishay P-Channel Power MOSFET 8.8 A 60 V 3-Pin Through Hole Surface Mount IRFU9024PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.22mm |
| Model | IRFU9024PBF |
| Width | 6.73mm |
| Mount Type | Through Hole, Surface |
| Maximum Operating Temperature | 150°C |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.28Ω |
| Maximum Power Dissipation Pd | 42W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Transistor Configuration | Single |
Key Features
- Features a maximum continuous drain current of 8.8 amperes.
- Supports a maximum drain-source voltage of 60 volts.
- Incorporates a low maximum drain-source resistance of 0.28 ohms at 10 V gate-source voltage.
- Offers a typical gate charge of 19 nanocoulombs at the specified gate voltage.
- Designed for both through hole and surface mount applications.
- Operates reliably within a temperature range from -55°C to 150°C.
- Maximum gate-source voltage is rated at ±20 volts.
- Compact dimensions with 6.22 mm length, 6.73 mm width, and 2.38 mm height.
Product Description
Vishay IRFU9024PBF is a robust P-channel power MOSFET engineered for efficient switching and amplification in electronic circuits. Featuring a maximum continuous drain current rating of 8.8 A and a maximum drain-source voltage of 60 V, it suits various applications in power management and electronic design.
This transistor operates within a wide temperature range of -55°C to 150°C, ensuring stability under diverse environmental conditions. The device includes a low on-resistance (Rds) of 0.28 ohms at 10 V gate-source voltage, enabling high efficiency and reduced power loss.
The MOSFET is available in compact DPAK (TO-252) and IPAK (TO-251) packages suitable for through hole and surface mounting, facilitating flexible PCB implementations. With 3 pins and single transistor configuration, it integrates seamlessly into power conversion, automotive circuits, and industrial control systems.
This product meets RoHS compliance, underscoring its environmentally conscious manufacturing process. Its gate charge of 19 nC supports fast switching applications, making it suitable for high-frequency designs and switching regulators.
Maximum continuous drain current of 8.8 A for reliable power handling. Maximum drain-source voltage of 60 V for circuit protection. Low Rds(on) of 0.28 Ω reduces conduction losses. Robust operating temperature range from -55°C to 150°C.
Designed for through hole and surface mount applications. Compact physical dimensions enable dense PCB layouts. RoHS compliant to meet environmental standards. Typical gate charge of 19 nC supports efficient switching. Single transistor configuration with 3 pins.
This Vishay power MOSFET is ideal in industrial electronics, power supplies, automotive applications, and consumer electronics where efficient power control is critical. Depend on this component for reliable operation and long service life under demanding conditions.
Explore more high-performance semiconductor products and Power MOSFETs by Vishay within EnvMart’s comprehensive electronics category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.8 amperes.
It supports a maximum drain-source voltage of 60 volts.
The maximum drain-source resistance is 0.28 ohms at a gate-source voltage of 10 volts.
The typical gate charge is 19 nanocoulombs at the specified gate voltage.
This model has dimensions of 6.22 mm in length, 6.73 mm in width, and 2.38 mm in height.
It operates reliably within a temperature range from -55°C to 150°C.
This power MOSFET is designed for both through hole and surface mount applications.
Yes, this product meets RoHS compliance, indicating environmentally conscious manufacturing.
The maximum gate-source voltage is rated at ±20 volts.
The IRFU9024PBF features a single transistor configuration with 3 pins.
The maximum power dissipation is rated at 42 watts.
There is 1 element per chip in this model.
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