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Vishay N-Channel Power MOSFET 14 A, 100 V, Surface Mount TO-263 3-Pin IRF530SPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 9.65mm |
| Model | IRF530SPBF |
| Width | 10.67mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.16Ω |
| Maximum Power Dissipation Pd | 88W |
| Typical Gate Charge Qg @ Vgs | 26nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 2.5V |
| Transistor Configuration | Single |
Key Features
- The device features a low maximum drain-source resistance of 0.16 ohms at 10 V gate drive.
- Maximum power dissipation rating is 88 watts, suitable for high-power applications.
- Operates reliably within a temperature range from -55°C up to 175°C.
- Typical gate charge is 26 nC at Vgs, enabling fast switching characteristics.
- Maximum gate-source voltage of 20 V ensures robust control and protection.
- Designed with halogen-free construction and compliant with RoHS directives.
- Offers dynamic dV/dt rating and ease of paralleling for flexible circuit designs.
- Optimized for low switching and conduction losses, enhancing efficiency and product life.
Product Description
Vishay IRF530SPBF is an N-channel Power MOSFET designed for discrete semiconductor applications requiring efficient switching and power handling capacity. This device is housed in a surface-mount TO-263 3-pin package, providing reliable mounting and thermal dissipation.
It supports a maximum continuous drain current of 14 amperes and withstands drain-source voltages up to 100 volts. The transistor features a low on-resistance of 0.16 ohms, allowing reduced conduction losses and improved performance in power circuits.
The MOSFET is specified to handle power dissipation of up to 88 watts, enabling use in high power applications such as battery chargers, inverters, switching mode power supplies (SMPS), and power supplies.
Operating temperature range is wide, from -55°C to 175°C, ensuring suitability for demanding industrial environments. Its typical gate charge of 26 nanocoulombs supports rapid switching speeds, enhancing efficiency in PWM and control circuits.
Designed as a single transistor structure with one element per chip, it meets IEC 61249-2-21 standards and RoHS 2002/95/EC compliance, emphasizing environmental responsibility through halogen-free construction and lead-free materials.
Other features include dynamic dV/dt rating, ease of paralleling multiple devices, and repetitive avalanche rating. These characteristics allow flexible and robust power management in various commercial and industrial electronic hardware solutions.
This Vishay MOSFET is made in China and provides reliable performance in industrial, laboratory, and electronic manufacturing applications requiring N-channel high-efficiency power transistors.
The device has a height of 4.83 mm, length of 9.65 mm, and width of 10.67 mm, matching the TO-263 package footprint. Number of pins: 3. Applications include battery chargers, inverters, power supplies, and SMPS units. Explore more Power MOSFETs within Vishay’s portfolio and other semiconductor solutions available on EnvMart for professional electronic component sourcing.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14 amperes.
It can withstand a maximum drain-source voltage of 100 volts.
The maximum power dissipation rating is 88 watts, suitable for high-power applications.
The typical gate charge is 26 nanocoulombs at Vgs, which supports fast switching characteristics.
It operates reliably within a temperature range from -55°C to 175°C.
This MOSFET has a height of 4.83 mm, a length of 9.65 mm, and a width of 10.67 mm.
It is housed in a surface-mount TO-263 3-pin package.
The maximum gate-source voltage is 20 volts, ensuring robust control and protection.
The device features a low maximum drain-source resistance of 0.16 ohms at a 10 V gate drive.
This model is suitable for applications such as battery chargers, inverters, switching mode power supplies (SMPS), and power supplies.
Yes, it is designed with halogen-free construction and is compliant with RoHS directives.
This MOSFET has a total of 3 pins.
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