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| Country of Origin | Taiwan |
|---|---|
| Brand | Vishay Siliconix |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | SQD40061EL_GE3 |
| Width | 2.38mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 10mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 107W |
| Typical Gate Charge Qg @ Vgs | 185nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.5V |
Vishay Siliconix SQD40061EL_GE3 is a high-performance TrenchFET P-channel Power MOSFET designed for efficient switching and power management in industrial and automotive electronics. With a maximum continuous drain current of 100 A and a maximum drain-source voltage of 40 V, this device is ideal for low-voltage, high-current applications requiring enhanced power dissipation capabilities rated at 107 W.
The MOSFET employs an enhancement mode channel with a low maximum on-resistance of 10 milliohms, delivering efficient conduction with minimal power loss. Its typical gate charge of 185 nC allows rapid switching, improving system efficiency in power electronics, motor drives, and DC-DC converters.
Designed for surface mounting, the device features a compact TO-252 4-pin package measuring approximately 6.73 mm in length, 6.22 mm in height, and 2.38 mm in width. It operates reliably within a broad temperature range from -55°C to 175°C, suitable for demanding environments including industrial automation, automotive electronics, and power supplies.
Notably, it meets the automotive industry’s AEC-Q101 standard, ensuring quality and reliability under automotive stress conditions. The device's forward voltage is approximately -1.5 V, supporting stable power switching behavior.
Manufactured in Taiwan, Province Of China, the SQD40061EL_GE3 is a trusted component for semiconductor discrete device needs, offering robust performance for power management solutions, industrial controls, and electronic assembly applications.
Maximum continuous drain current of 100 amperes supports high-current applications. Low on-resistance of 10 milliohms ensures efficient conduction and low power loss. Maximum power dissipation rating of 107 watts enables robust thermal handling.
Compact TO-252 surface mount package with 4 pins. Operates reliably between -55°C and 175°C. Typical gate charge of 185 nano-Coulombs for fast switching. Meets automotive standard AEC-Q101 for automotive-grade applications.
4-pin package optimized for electronic assembly on PCBs. Suitable for industrial, automotive, and power control semi-conductor applications. Manufactured in Taiwan, Province Of China. Explore related components and advanced semiconductor devices in the MOSFET category on EnvMart to find the perfect fit for your electronic projects and professional applications.
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