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Vishay Siliconix TrenchFET Type P-Channel MOSFET, 100 A, 40 V Enhancement Mode, 4-Pin TO-252 SQD40061EL_GE3

Category MOSFET Brand Vishay Siliconix Condition New

Specifications

Country of Origin Taiwan
Brand Vishay Siliconix
Height 6.22mm
Length 6.73mm
Model SQD40061EL_GE3
Width 2.38mm
Mount Type Surface
Series TrenchFET
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 10mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 107W
Typical Gate Charge Qg @ Vgs 185nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -1.5V

Key Features

  • Maximum continuous drain current of 100 amperes supports high-current applications.
  • Maximum drain-source voltage rating is 40 volts, suitable for low-voltage power control.
  • Low on-resistance of 10 milliohms ensures efficient conduction and low power loss.
  • Typical gate charge of 185 nano-Coulombs facilitates fast switching performance.
  • Maximum power dissipation rating of 107 watts enables robust thermal handling.
  • Operates within temperature range from -55°C to 175°C for reliability in harsh environments.
  • Forward voltage around -1.5 volts ensures efficient channel conduction.
  • Compact dimensions with 6.73 mm length, 6.22 mm height, and 2.38 mm width optimize PCB space.

Product Description

Vishay Siliconix SQD40061EL_GE3 is a high-performance TrenchFET P-channel Power MOSFET designed for efficient switching and power management in industrial and automotive electronics. With a maximum continuous drain current of 100 A and a maximum drain-source voltage of 40 V, this device is ideal for low-voltage, high-current applications requiring enhanced power dissipation capabilities rated at 107 W.

The MOSFET employs an enhancement mode channel with a low maximum on-resistance of 10 milliohms, delivering efficient conduction with minimal power loss. Its typical gate charge of 185 nC allows rapid switching, improving system efficiency in power electronics, motor drives, and DC-DC converters.

Designed for surface mounting, the device features a compact TO-252 4-pin package measuring approximately 6.73 mm in length, 6.22 mm in height, and 2.38 mm in width. It operates reliably within a broad temperature range from -55°C to 175°C, suitable for demanding environments including industrial automation, automotive electronics, and power supplies.

Notably, it meets the automotive industry’s AEC-Q101 standard, ensuring quality and reliability under automotive stress conditions. The device's forward voltage is approximately -1.5 V, supporting stable power switching behavior.

Manufactured in Taiwan, Province Of China, the SQD40061EL_GE3 is a trusted component for semiconductor discrete device needs, offering robust performance for power management solutions, industrial controls, and electronic assembly applications.

Maximum continuous drain current of 100 amperes supports high-current applications. Low on-resistance of 10 milliohms ensures efficient conduction and low power loss. Maximum power dissipation rating of 107 watts enables robust thermal handling.

Compact TO-252 surface mount package with 4 pins. Operates reliably between -55°C and 175°C. Typical gate charge of 185 nano-Coulombs for fast switching. Meets automotive standard AEC-Q101 for automotive-grade applications.

4-pin package optimized for electronic assembly on PCBs. Suitable for industrial, automotive, and power control semi-conductor applications. Manufactured in Taiwan, Province Of China. Explore related components and advanced semiconductor devices in the MOSFET category on EnvMart to find the perfect fit for your electronic projects and professional applications.

Vishay Siliconix TrenchFET Type P-Channel MOSFET, 100 A, 40 V Enhancement Mode, 4-Pin TO-252 SQD40061EL_GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 100 amperes, making it suitable for high-current applications.

The maximum drain-source voltage rating is 40 volts, which is appropriate for low-voltage power control.

It has a low on-resistance of 10 milliohms, ensuring efficient conduction and minimal power loss.

The typical gate charge is 185 nano-Coulombs, which facilitates fast switching performance.

The maximum power dissipation rating is 107 watts, enabling robust thermal handling.

It operates reliably within a temperature range from -55°C to 175°C, suitable for harsh environments.

The compact TO-252 package measures approximately 6.73 mm in length, 6.22 mm in height, and 2.38 mm in width.

This MOSFET meets the automotive industry’s AEC-Q101 standard, ensuring quality and reliability under automotive stress conditions.

It features a 4-pin configuration, optimized for surface mounting on PCBs.

The forward voltage is approximately -1.5 volts, supporting stable power switching behavior.

It is a Type P-channel MOSFET, designed for enhancement mode operation.

This model is manufactured in Taiwan, Province Of China.

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