Vishay Siliconix TrenchFET N-Channel MOSFET 12 A, 60 V, Enhancement Mode, 6-Pin SC-70-6L SiA106DJ-T1-GE3

Vishay Siliconix SiA106DJ-T1-GE3 is a high-performance TrenchFET® Gen IV N-Channel MOSFET designed for industrial and electronic applications requiring efficient power switching and amplification.

This MOSFET can continuously conduct up to 12 A of drain current with a maximum drain-to-source voltage of 60 V. Its very low Rds(on) of 0.0185Ω minimizes conduction losses, improving overall power efficiency.

Encased in a compact 6-pin SC-70-6L surface mount package, this device suits high-density circuit designs. The unit can sustain a maximum power dissipation of 19 W and operates reliably across a wide temperature range from -55°C to 150°C.

The device features an enhancement mode channel type, ensuring normally off operation, which is ideal for switching power supplies, DC-DC converters, and low-voltage motor control applications. With a maximum gate source voltage of 20 V and a typical gate charge of 6.9 nC, it supports fast switching transitions.

Its robust forward voltage of 1.2 V allows efficient current conduction. Manufactured in China, this Vishay Siliconix MOSFET is suitable for use in electronics manufacturing, industrial control systems, consumer electronics, and automotive electronics where high reliability and low power loss are critical.

Features TrenchFET® Gen IV technology for enhanced performance. Extremely low Rds(on) ensures power efficiency in switching applications. Compact surface mount SC-70-6L package designed for space-saving layouts. Wide operating temperature range suitable for harsh environments.

High current and voltage ratings for versatile application support. Explore the full range of Vishay Siliconix power MOSFETs and other semiconductor components on EnvMart for reliable industrial and electronic solutions.