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Vishay Nexperia NX2301P,215 Type P-Channel MOSFET, 2 A, 20 V Enhancement, 3-Pin SOT-23 NX2301P,215

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Vishay Nexperia NX2301P,215 Type P-Channel MOSFET, 2 A, 20 V Enhancement, 3-Pin SOT-23 NX2301P,215

Name: Vishay Nexperia NX2301P,215 Type P-Channel MOSFET, 2 A, 20 V Enhancement, 3-Pin SOT-23 NX2301P,215
Brand: Vishay
SKU: 233777
Price: 0.11 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	1mm
Length	3mm
Model	NX2301P,215
Width	1.4mm
Mount Type	Surface
Series	NX2301P
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	2A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	120mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	400mW
Typical Gate Charge Qg @ Vgs	4.5nC
Maximum Gate Source Voltage Vgs	-8, +8V

Key Features

The device supports a maximum continuous drain current of 2 A.
Maximum drain-source voltage is rated at 20 V suitable for low-voltage applications.
Has a maximum drain-source resistance (Rds) of 120 mΩ ensuring low conduction losses.
Operates with an enhancement mode channel type P configuration.
Compact SOT-23 surface mount package with 3 pins for easy PCB integration.
Typical gate charge of 4.5 nC at Vgs for fast switching speeds.
Wide operating temperature range from -55°C to 150°C for robust performance.
Meets the automotive standard AEC-Q101 ensuring reliability in automotive electronics.

Product Description

Vishay Nexperia NX2301P,215 is a high-performance type P-channel MOSFET in a compact 3-pin SOT-23 package, rated for 2 A continuous drain current and 20 V drain-source voltage. It features an enhancement mode channel providing excellent switching control suited for low voltage applications.

This MOSFET offers a low Rds(on) of 120 mΩ which reduces conduction losses, delivering efficient power management in electronic circuits. The device's typical gate charge of 4.5 nC at Vgs ensures fast switching, which is ideal for high-frequency and power-sensitive applications.

Designed for durability, the device operates reliably across a wide temperature range from -55°C up to 150°C and conforms to the automotive standard AEC-Q101, making it suitable for automotive and industrial use.

The SOT-23 package facilitates surface mounting on PCBs, allowing for compact and space-saving designs in electronic assemblies. Its maximum power dissipation of 400 mW makes it capable of handling moderate power levels.

This MOSFET is perfect for power management in consumer electronics, automotive controls, and industrial equipment requiring reliable switching with minimal losses. Supports continuous drain current up to 2 A. 20 V maximum drain-source voltage.

Low on-resistance (120 mΩ) for energy efficiency. Enhancement mode P-channel for precise control. Compact 3-pin SOT-23 surface mount package. Fast switching enabled by 4.5 nC typical gate charge. Wide operating temperature range of -55°C to 150°C.

Certified with AEC-Q101 automotive reliability standard. Power dissipation capacity of 400 mW.

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