onsemi PowerTrench N-Channel MOSFET 50 A, 250 V Enhancement 3-Pin TO-263 FDB2710

onsemi FDB2710 PowerTrench N-Channel MOSFET combines robust current capability with high voltage rating suitable for power switching and amplification in industrial and electronic circuits. This device is designed as an enhancement mode transistor featuring a low on-resistance of 42 milliohms, enabling minimal power loss and efficient operation in power management systems.

The transistor is packaged in a compact three-pin TO-263 surface mount format, facilitating easy integration on printed circuit boards in power supplies, motor controllers, and other high current applications. It supports a maximum continuous drain current of 50 amps and a maximum drain-source voltage of 250 volts, making it versatile for medium voltage power electronics.

Electrical characteristics include a forward voltage of 1.2 volts and gate charge of 78 nanocoulombs at typical gate-source voltage conditions, ensuring precise gate control and switching speed. The device can operate over a wide temperature range from -55°C to 150°C, underscoring its reliability in harsh industrial, automotive, and commercial environments.

This MOSFET is engineered using the PowerTrench technology to enhance switching performance and efficiency, suitable for use in power management ICs, discrete semiconductor modules, and switching regulators.

With a robust maximum power dissipation rating of 260 watts, it assures durability in demanding applications such as industrial automation, HVAC systems, and laboratory equipment. Features a maximum continuous drain current of 50 amps for high current handling.

Capable of withstanding a maximum drain-source voltage of 250 volts. Designed with a PowerTrench series for improved performance and low on-resistance. Enclosed in a TO-263 surface mount package with 3 pins for compact mounting.

Maximum drain-source resistance of 42 milliohms allows efficient conduction. Supports an enhancement channel mode for reliable switching control. Can tolerate gate-source voltages from -30 to +30 volts. Forward voltage is 1.2 volts ensuring low conduction loss.

Maximum power dissipation is 260 watts for robust operation under high loads. Operates reliably in temperatures from -55 to 150 degrees Celsius. Compact device dimensions with length 10.67 mm, width 11.33 mm, and height 4.83 mm.

This onsemi FDB2710 MOSFET is ideal for electronic component requirements in industrial, commercial, and automotive sectors where efficient power switching is critical. Explore the extensive range of semiconductor components and power management devices available at EnvMart for advanced electronic design and manufacturing needs.