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onsemi PowerTrench Type P-Channel MOSFET, Surface Mount, 5.8 A, 20 V, Enhancement Mode, 6-Pin SOT-23 Package FDC608PZ

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin Philippines
Brand onsemi
Height 1mm
Length 3mm
Model FDC608PZ
Width 1.7mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 6
Channel Type Type P
Maximum Continuous Drain Current Id 5.8A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 43mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 17nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf -0.7V

Key Features

  • Features a shielded-gate structure enabling low figure of merit (FOM) for enhanced efficiency.
  • Operates in enhancement mode providing reliable switching performance.
  • Equipped with a soft reverse recovery body diode reducing snubber circuit needs.
  • Compact 6-Pin SOT-23 package measuring 3mm length, 1.7mm width, and 1mm height.
  • Handles maximum power dissipation of 1.6 W with operating temperature range from -55°C to 150°C.
  • Has a maximum drain-source resistance (Rds) of 43 mΩ ensuring low conduction losses.
  • Typical gate charge of 17 nC contributes to fast switching suitable for synchronous rectification.
  • Designed for surface mount applications requiring efficient power switching.

Product Description

onsemi FDC608PZ PowerTrench Type P-Channel MOSFET is a high-performance discrete semiconductor designed for power management in electronic circuits. It features a maximum continuous drain current of 5.8 A and a maximum drain-source voltage of 20 V, optimized for surface mount applications with the widely used 6-Pin SOT-23 package.

This MOSFET employs an advanced shielded-gate structure to achieve a lower figure of merit, which significantly enhances system efficiency and power density. Its soft reverse recovery body diode reduces switching losses and the need for additional snubber components, making it ideal for synchronous rectification in AC/DC power supplies.

The device operates in enhancement mode, offering reliable and controlled switching. Key electrical characteristics include a maximum drain-source resistance of 43 mΩ and a typical gate charge of 17 nC, enabling fast switching speeds and efficient power handling.

Mechanically compact, the transistor dimensions are 3 mm in length, 1.7 mm in width, and 1 mm in height, fitting compact PCB layouts. It supports a wide operating temperature range from -55°C up to 150°C and a maximum power dissipation of 1.6 W under safe operating conditions.

The onsemi FDC608PZ is suitable for various industrial, consumer electronics, automotive, and power supply applications where efficient power switching and management are critical. Its robust design and surface mounting capability facilitate straightforward integration into modern electronic assemblies.

Shielded-gate structure for low figure of merit improves efficiency. Soft reverse recovery body diode reduces ancillary circuitry. Enhancement mode operation ensures stable switching. Compact 6-Pin SOT-23 package fits dense electronic layouts.

Wide operating temperature range from -55°C to 150°C. Maximum power dissipation of 1.6 W at recommended conditions. Low drain-source resistance minimizes conduction losses. Typical gate charge supports fast switching applications.

Explore more semiconductor and MOSFET products from onsemi and related categories on EnvMart, your reliable industrial and electronic components marketplace.

onsemi PowerTrench Type P-Channel MOSFET, Surface Mount, 5.8 A, 20 V, Enhancement Mode, 6-Pin SOT-23 Package FDC608PZ
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Frequently Asked Questions

The maximum continuous drain current for this model is 5.8 A.

It has a maximum drain-source voltage of 20 V.

The maximum power dissipation for this unit is 1.6 W under safe operating conditions.

The SOT-23 package measures 3 mm in length, 1.7 mm in width, and 1 mm in height.

The typical gate charge is 17 nC, which supports fast switching applications.

The maximum drain-source resistance (Rds) is 43 mΩ, ensuring low conduction losses.

This model operates within a temperature range of -55°C to 150°C.

It is suitable for various industrial, consumer electronics, automotive, and power supply applications where efficient power switching is critical.

The channel type of this MOSFET is P-Channel.

This model is designed for surface mount applications.

The maximum gate-source voltage is -12 V to +12 V.

It belongs to the PowerTrench series of MOSFETs.

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