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| Country of Origin | Philippines |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC608PZ |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 5.8A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 43mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -0.7V |
onsemi FDC608PZ PowerTrench Type P-Channel MOSFET is a high-performance discrete semiconductor designed for power management in electronic circuits. It features a maximum continuous drain current of 5.8 A and a maximum drain-source voltage of 20 V, optimized for surface mount applications with the widely used 6-Pin SOT-23 package.
This MOSFET employs an advanced shielded-gate structure to achieve a lower figure of merit, which significantly enhances system efficiency and power density. Its soft reverse recovery body diode reduces switching losses and the need for additional snubber components, making it ideal for synchronous rectification in AC/DC power supplies.
The device operates in enhancement mode, offering reliable and controlled switching. Key electrical characteristics include a maximum drain-source resistance of 43 mΩ and a typical gate charge of 17 nC, enabling fast switching speeds and efficient power handling.
Mechanically compact, the transistor dimensions are 3 mm in length, 1.7 mm in width, and 1 mm in height, fitting compact PCB layouts. It supports a wide operating temperature range from -55°C up to 150°C and a maximum power dissipation of 1.6 W under safe operating conditions.
The onsemi FDC608PZ is suitable for various industrial, consumer electronics, automotive, and power supply applications where efficient power switching and management are critical. Its robust design and surface mounting capability facilitate straightforward integration into modern electronic assemblies.
Shielded-gate structure for low figure of merit improves efficiency. Soft reverse recovery body diode reduces ancillary circuitry. Enhancement mode operation ensures stable switching. Compact 6-Pin SOT-23 package fits dense electronic layouts.
Wide operating temperature range from -55°C to 150°C. Maximum power dissipation of 1.6 W at recommended conditions. Low drain-source resistance minimizes conduction losses. Typical gate charge supports fast switching applications.
Explore more semiconductor and MOSFET products from onsemi and related categories on EnvMart, your reliable industrial and electronic components marketplace.
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