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onsemi PowerTrench N-Channel MOSFET 145 A 40 V Enhancement 3-Pin TO-252 FDD8444

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onsemi PowerTrench N-Channel MOSFET 145 A 40 V Enhancement 3-Pin TO-252 FDD8444

Name: onsemi PowerTrench N-Channel MOSFET 145 A 40 V Enhancement 3-Pin TO-252 FDD8444
Brand: onsemi
SKU: 227507
Price: 1.17 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	2.39mm
Length	6.73mm
Model	FDD8444
Width	6.22mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	145A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	9.4mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	153W
Typical Gate Charge Qg @ Vgs	89nC
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

Enhancement mode channel ensures efficient control of current flow.
TO-252 surface mount package with compact dimensions of 6.73 mm length and 6.22 mm width.
Low drain source resistance of 9.4 mΩ allows minimal power loss at maximum conduction.
High maximum power dissipation rating of 153 W supports demanding applications.
Wide operating temperature range from -55°C to 175°C for reliability in harsh conditions.
Typical gate charge of 89 nC at Vgs for fast switching performance.
Maximum gate source voltage tolerance from -20 V to +20 V ensures robust gate drive.
3-pin configuration compatible with standard power MOSFET circuits.

Product Description

onsemi FDD8444 PowerTrench N-Channel MOSFET is a high-current, low-voltage transistor designed for advanced power management circuits requiring efficient switching capabilities with continuous drain current of up to 145 A and a maximum drain-source voltage of 40 V. It features an enhancement mode channel that allows precise electronic control of conduction in power electronics applications.

The device comes in a TO-252 surface mount package with precise dimensions - length 6.73 mm, width 6.22 mm, and height 2.39 mm - which is suitable for compact PCB layouts. Its low maximum drain-source resistance of 9.4 mΩ contributes to reduced conduction losses, enhancing system efficiency especially in high-current scenarios.

This MOSFET supports a maximum power dissipation of 153 W and operates reliably over a wide temperature range from -55 to 175 degrees Celsius, making it ideal for automotive, industrial, and consumer electronics applications where thermal management and robustness are critical.

Typical gate charge is 89 nC measured at gate-source voltage, ensuring fast switching speeds with minimal power overhead. The device tolerates a maximum gate-source voltage from -20 V to +20 V, protecting the gate oxide from voltage spikes. It includes three pins for source, gate, and drain connections compliant with standard MOSFET usage conventions.

Engineered and manufactured in China, this MOSFET does not carry specific automotive certification but is widely adopted in various power circuit designs across industries such as industrial controls, power supplies, and motor control circuits.

Enhancement mode N-Channel power transistor. TO-252 surface mount package for compact design. High current capacity of 145 A continuous drain current. Low on-resistance of 9.4 mΩ minimizes power loss. Operating temperature range from -55°C to 175°C.

Gate charge ensures efficient switching performance. Explore more high-performance MOSFETs and semiconductor components in EnvMart’s electronic components category for reliable power management solutions.